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High frequency techniques for advanced MOS device characterization

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TitleInfo (displayLabel = Citation Title); (type = uniform)
Title
High frequency techniques for advanced MOS device characterization
Name (ID = NAME001); (type = personal)
NamePart (type = family)
Wang
NamePart (type = given)
Yun
NamePart (type = date)
1981-
DisplayForm
Yun Wang
Role
RoleTerm (authority = RUETD)
author
Name (ID = NAME002); (type = personal)
NamePart (type = family)
Cheung
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Kin P
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Advisory Committee
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Kin P Cheung
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chair
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NamePart (type = family)
Lu
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Yicheng
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Advisory Committee
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Yicheng Lu
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internal member
Name (ID = NAME004); (type = personal)
NamePart (type = family)
Kuang
NamePart (type = given)
Sheng
Affiliation
Advisory Committee
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Sheng Kuang
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internal member
Name (ID = NAME005); (type = personal)
NamePart (type = family)
John
NamePart (type = given)
Suehle
Affiliation
Advisory Committee
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Suehle John
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outside member
Name (ID = NAME006); (type = corporate)
NamePart
Rutgers University
Role
RoleTerm (authority = RULIB)
degree grantor
Name (ID = NAME007); (type = corporate)
NamePart
Graduate School - New Brunswick
Role
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school
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Text
Genre (authority = marcgt)
theses
OriginInfo
DateCreated (qualifier = exact)
2008
DateOther (qualifier = exact); (type = degree)
2008-01
Language
LanguageTerm
English
PhysicalDescription
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electronic
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application/pdf
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text/xml
Extent
xx, 233 pages
Abstract
Rapid advances in the semiconductor industry have led to the proliferation of electric devices and information technology (IT). Integrated circuits(IC) based upon silicon MOSFET's have been used in virtually every electronic device produced today. The competitiveness of this huge market urges an increased device performance with lower cost. Over the past three decades, it is fulfilled by reducing transistor gate lengths and oxide thickness with each new generation of manufacturing technology. The leading edge CMOS technology is currently at the 45nm node with physical gate length at 18 nm and an equivalent gate oxide thickness (EOT) of 0.9 nm. However, as the device is miniaturized into the nanometer-scale regime nowadays, some challenges abound. Some challenges are new, some are just getting tougher and most of them will continue to become even more difficult to deal with for future generations. It is the world-wide effort to meet these challenges for sustaining the rapid growth of the industry. In this thesis, we will address a few of these challenges and offer some new approaches to get around them. Specifically, we introduce a new measurement technique to solve the precision problem in C-V measurement based on Time domain Reflectrometry(TDR). We also use the combination of experiment and theory to resolve the defect depth-profiling ambiguity associated with charge pumping measurement. Moreover, we find a new mode in transistor degradation that will become much more serious as the transistor size shrinks further. All these results represent a major and important advance which is also timely to the IC industry.
Note (type = degree)
Ph.D.
Note (type = bibliography)
Includes bibliographical references (p. 189-201).
Subject (ID = SUBJ1); (authority = RUETD)
Topic
Electrical and Computer Engineering
Subject (ID = SUBJ2); (authority = ETD-LCSH)
Topic
Metal oxide semiconductors
RelatedItem (type = host)
TitleInfo
Title
Graduate School - New Brunswick Electronic Theses and Dissertations
Identifier (type = local)
rucore19991600001
Identifier (type = hdl)
http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.17235
Identifier
ETD_600
Location
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NjNbRU
Identifier (type = doi)
doi:10.7282/T3N58MQM
Genre (authority = ExL-Esploro)
ETD doctoral
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The author owns the copyright to this work.
Copyright
Status
Copyright protected
Availability
Status
Open
AssociatedEntity (AUTHORITY = rulib); (ID = 1)
Name
Yun Wang
Role
Copyright holder
Affiliation
Rutgers University. Graduate School - New Brunswick
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Permission or license
Detail
Non-exclusive ETD license
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License
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Author Agreement License
Detail
I hereby grant to the Rutgers University Libraries and to my school the non-exclusive right to archive, reproduce and distribute my thesis or dissertation, in whole or in part, and/or my abstract, in whole or in part, in and from an electronic format, subject to the release date subsequently stipulated in this submittal form and approved by my school. I represent and stipulate that the thesis or dissertation and its abstract are my original work, that they do not infringe or violate any rights of others, and that I make these grants as the sole owner of the rights to my thesis or dissertation and its abstract. I represent that I have obtained written permissions, when necessary, from the owner(s) of each third party copyrighted matter to be included in my thesis or dissertation and will supply copies of such upon request by my school. I acknowledge that RU ETD and my school will not distribute my thesis or dissertation or its abstract if, in their reasonable judgment, they believe all such rights have not been secured. I acknowledge that I retain ownership rights to the copyright of my work. I also retain the right to use all or part of this thesis or dissertation in future works, such as articles or books.
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