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Tunable ZnO surface acoustic wave devices based on acoustoelectric interaction
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Title
Tunable ZnO surface acoustic wave devices based on acoustoelectric interaction
Name
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Zhu
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Jun
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1972-
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Jun Zhu
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(authority = RUETD)
author
Name
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Lu
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Yicheng
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Advisory Committee
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Yicheng Lu
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chair
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Panayatatos
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Paul
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Advisory Committee
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Paul Panayatatos
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internal member
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Jiang
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Wei
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Advisory Committee
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Wei Jiang
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internal member
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Safari
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Ahmad
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Advisory Committee
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Ahmad Safari
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outside member
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Rutgers University
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degree grantor
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Graduate School - New Brunswick
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school
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Text
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theses
OriginInfo
DateCreated
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2008
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2008-01
Language
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English
PhysicalDescription
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electronic
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application/pdf
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Extent
xiv, 150 pages
Abstract
Tunable surface acoustic wave (SAW) devices have been attracting considerable research efforts, as they are highly desired in advanced communication systems by offering versatile signal processing capability. Among various tuning mechanisms, the perturbation of the electrical boundary condition based on the acoustoelectric interaction in a semiconducting/piezoelectric multilayer structure is a promising approach to realize tunable SAW devices with low bias, large tunability, and small device dimension. To reduce the fabrication complexity and enhance the device reliability, the monolithic device structure is preferable.
This dissertation addresses the design and development of the tunable ZnO SAW devices based on the acoustoelectric interaction. Epitaxial ZnO and MgxZn1-xO multilayer structures grown by metal-organic chemical vapor deposition (MOCVD) on r-Al2O3 substrates are used as the basic structure, which offer advantages as high coupling coefficient and multimode SAW generation. The device related processing techniques, including wet chemical and dry etching of ZnO and MgxZn1-xO films, are investigated with respect to the etch rate, etch profile, surface morphology and process induced damage. The maximal 1:1 pattern edge slope has been achieved.
A prototype of ZnO UV SAW device has been demonstrated using semiconducting-piezoelectric ZnO multilayer structure, which enables the wireless output for sensor network. The interaction of the SAW with the UV induced carriers in the semiconducting ZnO layer results in a phase shift and an insertion loss change, as functions of the incident light wavelength and power. A phase shift of 107o is achieved at 365 nm for a light power of 2.32 mW/ cm2.
A prototype of ZnO based voltage controlled multi-mode tunable SAW device has been demonstrated through the integration of a depletion-type MIS structure (Al/SiO2/semiconducting ZnO) and a piezoelectric ZnO/r-Al2O3 system. The acoustic velocity tunability is achieved by changing the sheet conductivity of the semiconducting channel through the gate biasing. Due to the in-plane piezoelectric anisotropy of the ZnO/r-Al2O3 system, the device can be operated with both Sezawa and Love mode for gaseous and liquid sensing, respectively. Under -18 V bias, 420o and 277.3o phase shifts are achieved for Sezawa and Love mode operation, respectively.
This dissertation addresses the design and development of the tunable ZnO SAW devices based on the acoustoelectric interaction. Epitaxial ZnO and MgxZn1-xO multilayer structures grown by metal-organic chemical vapor deposition (MOCVD) on r-Al2O3 substrates are used as the basic structure, which offer advantages as high coupling coefficient and multimode SAW generation. The device related processing techniques, including wet chemical and dry etching of ZnO and MgxZn1-xO films, are investigated with respect to the etch rate, etch profile, surface morphology and process induced damage. The maximal 1:1 pattern edge slope has been achieved.
A prototype of ZnO UV SAW device has been demonstrated using semiconducting-piezoelectric ZnO multilayer structure, which enables the wireless output for sensor network. The interaction of the SAW with the UV induced carriers in the semiconducting ZnO layer results in a phase shift and an insertion loss change, as functions of the incident light wavelength and power. A phase shift of 107o is achieved at 365 nm for a light power of 2.32 mW/ cm2.
A prototype of ZnO based voltage controlled multi-mode tunable SAW device has been demonstrated through the integration of a depletion-type MIS structure (Al/SiO2/semiconducting ZnO) and a piezoelectric ZnO/r-Al2O3 system. The acoustic velocity tunability is achieved by changing the sheet conductivity of the semiconducting channel through the gate biasing. Due to the in-plane piezoelectric anisotropy of the ZnO/r-Al2O3 system, the device can be operated with both Sezawa and Love mode for gaseous and liquid sensing, respectively. Under -18 V bias, 420o and 277.3o phase shifts are achieved for Sezawa and Love mode operation, respectively.
Note
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Ph.D.
Note
(type = bibliography)
Includes bibliographical references (p. 142-149).
Subject
(ID = SUBJ1);
(authority = RUETD)
Topic
Electrical and Computer Engineering
Subject
(ID = SUBJ2);
(authority = ETD-LCSH)
Topic
Acoustic surface wave devices
Subject
(ID = SUBJ3);
(authority = ETD-LCSH)
Topic
Piezoelectric devices
Subject
(ID = SUBJ4);
(authority = ETD-LCSH)
Topic
Zinc oxide
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Title
Graduate School - New Brunswick Electronic Theses and Dissertations
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rucore19991600001
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http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.17247
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ETD_669
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NjNbRU
Identifier
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doi:10.7282/T3736R9Q
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ETD doctoral
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Open
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Name
JUN ZHU
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Copyright holder
Affiliation
Rutgers University. Graduate School - New Brunswick
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Non-exclusive ETD license
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I hereby grant to the Rutgers University Libraries and to my school the non-exclusive right to archive, reproduce and distribute my thesis or dissertation, in whole or in part, and/or my abstract, in whole or in part, in and from an electronic format, subject to the release date subsequently stipulated in this submittal form and approved by my school. I represent and stipulate that the thesis or dissertation and its abstract are my original work, that they do not infringe or violate any rights of others, and that I make these grants as the sole owner of the rights to my thesis or dissertation and its abstract. I represent that I have obtained written permissions, when necessary, from the owner(s) of each third party copyrighted matter to be included in my thesis or dissertation and will supply copies of such upon request by my school. I acknowledge that RU ETD and my school will not distribute my thesis or dissertation or its abstract if, in their reasonable judgment, they believe all such rights have not been secured. I acknowledge that I retain ownership rights to the copyright of my work. I also retain the right to use all or part of this thesis or dissertation in future works, such as articles or books.
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