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Design, fabrication and process developments of 4H-silicon carbide TIVJFET
Descriptive
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Title
Design, fabrication and process developments of
4H-silicon carbide TIVJFET
4H-silicon carbide TIVJFET
Name
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Li
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Yuzhu
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Yuzhu Li
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Zhao
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Jian
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Advisory Committee
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Jian H Zhao
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Kuang
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Sheng
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Advisory Committee
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Sheng Kuang
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internal member
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Jiang
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Wei
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Advisory Committee
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Wei Jiang
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Weiner
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Maurice
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Advisory Committee
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Maurice Weiner
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Rutgers University
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degree grantor
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Graduate School - New Brunswick
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school
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theses
OriginInfo
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2008
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2008-01
Language
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English
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electronic
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application/pdf
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text/xml
Extent
xi, 85 pages
Abstract
This Ph.D thesis describes and reviews the state-of-the-start 4H-SiC power junction field-effect transistors (JFET). The purpose of thesis research includes design and fabrication of TIVJFET and investigations on the improvements on existing processing technologies, targeting simpler, reliable process that improves device performance.
Fabrication results are presented. Among the results is a normally-off 10 kV, 106 mΩcm2 TIVJFET with a record-high value for figure of-merit (FOM) (VB2/R SP-ON) of 943 MW/cm2 among all normally-off SiC FETs.
Processing technologies underwent significant improvements. Simpler and more reliable processes were developed, including Bosch dry etching, Ni self-aligned silicide, thick gate-overlay and oxide trench-fill. All new processes were confirmed in test TIVJFET fabrication and results were presented.
A 430V normally-off TIVJFET of very low R SP-ON of 1.6mΩcm2 was achieved using new developed process. This device has a channel resistance is 0.5mΩcm2, corresponding to only one third of channel resistance reported in [25]. This R SP-ON is the lowest among all 400V class normally-off SiC FETs reported to date.
A 1568V normally-on TIVJFET was fabricated using new developed processes. RON-SP was 2.0mΩcm2 when current gain was over 12000 (VGS=2.5V). And RON-SP was 1.75mΩcm2 when current gain was over 120 (VGS=3V). This R SP_ON is the lowest among all 1500V class normally-on SiC FETs reported to date. Comparing with the device reported in [16], at the same current gain of 100, this R SP_ON corresponded to a 37% reduction.
Fabrication results are presented. Among the results is a normally-off 10 kV, 106 mΩcm2 TIVJFET with a record-high value for figure of-merit (FOM) (VB2/R SP-ON) of 943 MW/cm2 among all normally-off SiC FETs.
Processing technologies underwent significant improvements. Simpler and more reliable processes were developed, including Bosch dry etching, Ni self-aligned silicide, thick gate-overlay and oxide trench-fill. All new processes were confirmed in test TIVJFET fabrication and results were presented.
A 430V normally-off TIVJFET of very low R SP-ON of 1.6mΩcm2 was achieved using new developed process. This device has a channel resistance is 0.5mΩcm2, corresponding to only one third of channel resistance reported in [25]. This R SP-ON is the lowest among all 400V class normally-off SiC FETs reported to date.
A 1568V normally-on TIVJFET was fabricated using new developed processes. RON-SP was 2.0mΩcm2 when current gain was over 12000 (VGS=2.5V). And RON-SP was 1.75mΩcm2 when current gain was over 120 (VGS=3V). This R SP_ON is the lowest among all 1500V class normally-on SiC FETs reported to date. Comparing with the device reported in [16], at the same current gain of 100, this R SP_ON corresponded to a 37% reduction.
Note
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Ph.D.
Note
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Includes bibliographical references (p. 80-83).
Subject
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Topic
Electrical and Computer Engineering
Subject
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Topic
Field effect transistors
Subject
(ID = SUBJ3);
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Topic
Junction transistors
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TitleInfo
Title
Graduate School - New Brunswick Electronic Theses and Dissertations
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rucore19991600001
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http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.17256
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ETD_638
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doi:10.7282/T3VT1SG9
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ETD doctoral
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The author owns the copyright to this work.
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Copyright protected
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Open
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Name
Yuzhu Li
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Rutgers University. Graduate School - New Brunswick
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Non-exclusive ETD license
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Author Agreement License
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I hereby grant to the Rutgers University Libraries and to my school the non-exclusive right to archive, reproduce and distribute my thesis or dissertation, in whole or in part, and/or my abstract, in whole or in part, in and from an electronic format, subject to the release date subsequently stipulated in this submittal form and approved by my school. I represent and stipulate that the thesis or dissertation and its abstract are my original work, that they do not infringe or violate any rights of others, and that I make these grants as the sole owner of the rights to my thesis or dissertation and its abstract. I represent that I have obtained written permissions, when necessary, from the owner(s) of each third party copyrighted matter to be included in my thesis or dissertation and will supply copies of such upon request by my school. I acknowledge that RU ETD and my school will not distribute my thesis or dissertation or its abstract if, in their reasonable judgment, they believe all such rights have not been secured. I acknowledge that I retain ownership rights to the copyright of my work. I also retain the right to use all or part of this thesis or dissertation in future works, such as articles or books.
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