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Piezoelectricity in ZnO-based multilayer structures for sensor applications

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TitleInfo (displayLabel = Citation Title); (type = uniform)
Title
Piezoelectricity in ZnO-based multilayer structures for sensor applications
Name (ID = NAME001); (type = personal)
NamePart (type = family)
Chen
NamePart (type = given)
Ying
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Ying Chen
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author
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NamePart (type = family)
Lu
NamePart (type = given)
Yicheng
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Advisory Committee
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Yicheng Lu
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chair
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NamePart (type = family)
Sheng
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Kuang
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Advisory Committee
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Kuang Sheng
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RoleTerm (authority = RULIB)
internal member
Name (ID = NAME004); (type = personal)
NamePart (type = family)
Jiang
NamePart (type = given)
Wei
Affiliation
Advisory Committee
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Wei Jiang
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RoleTerm (authority = RULIB)
internal member
Name (ID = NAME005); (type = personal)
NamePart (type = family)
Wittstruck
NamePart (type = given)
Richard
Affiliation
Advisory Committee
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Richard H Wittstruck
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RoleTerm (authority = RULIB)
outside member
Name (ID = NAME006); (type = corporate)
NamePart
Rutgers University
Role
RoleTerm (authority = RULIB)
degree grantor
Name (ID = NAME007); (type = corporate)
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Graduate School - New Brunswick
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school
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Text
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theses
OriginInfo
DateCreated (qualifier = exact)
2008
DateOther (qualifier = exact); (type = degree)
2008-05
Language
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English
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electronic
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application/pdf
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text/xml
Extent
xvi, 137 pages
Abstract
Zinc oxide (ZnO) is a multifunctional material with promising applications. Through proper doping, ZnO can be made transparent and conductive, piezoelectric, or ferromagnetic. Piezoelectric ZnO which possess large electromechanical coupling coefficients has been deposited on high velocity and low loss substrates to develop surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices. Such devices can be used in both communications and sensors fields. This dissertation focuses on the integration of piezoelectric ZnO with various important semiconductor materials, including GaN, SiC, and Si, for the acoustic wave based sensor applications.
The piezoelectric properties in ZnO/AlxGa1-xN/c-Al2O3 structure are investigated. The layered structure provides the flexibility to tailor acoustic properties by varying the Al composition in AlxGa1-xN, and the thickness ratio of ZnO to AlxGa1-xN. It is found that a wide thickness-frequency product region where coupling is close to its maximum value can be obtained. This multilayer structure is promising to design the high velocity, low loss and wide bandwidth SAW devices, which can be used in both the communications and sensors fields.
A new hybrid deposition technology is developed by using metalorganic chemical vapor deposition (MOCVD) of a thin ZnO buffer layer with a minimum thickness of ~10nm followed by sputtering deposition of a thick (above 2µm) piezoelectric Ni-doped MgxZn1-xO films. This novel deposition technology improves piezoelectric properties of a-MgxZn1-xO (0 ≤ x ≤ 0.3) films on r-Al2O3 for ZnO based tunable SAW device.
Piezoelectric ZnO/SiC-6H structure offers high velocities and high coupling coefficients for high frequency SAW devices, which can be used in high-temperature and harsh environments. Epitaxial ZnO films grown on c-plane [0001] oriented SiC-6H substrates by MOCVD form a rectifying heterojunction.
Thin film bulk acoustic resonators (TFBAR) are demonstrated using piezoelectric MgxZn1-xO films on Si substrates with an acoustic mirror consisting of alternating quarter-wavelength SiO2 and W layers. The bulk acoustic velocity of MgxZn1-xO increases with increasing Mg composition. A mass sensitivity higher than 103 Hzcm2/ng is obtained. ZnO nanostructures possess unique advantages for the biosensor applications, such as giant surface areas, high sensitivity, biological compatibility, and integratability with Si-based electronics. A prototype of biosensors integrating TFBAR with functionalized ZnO nanotips is demonstrated with improved sensitivity.
Note (type = degree)
Ph.D.
Note (type = bibliography)
Includes bibliographical references (p. 126-135).
Subject (ID = SUBJ1); (authority = RUETD)
Topic
Electrical and Computer Engineering
Subject (ID = SUBJ2); (authority = ETD-LCSH)
Topic
Piezoelectric devices
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Title
Graduate School - New Brunswick Electronic Theses and Dissertations
Identifier (type = local)
rucore19991600001
Identifier (type = hdl)
http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.17290
Identifier
ETD_790
Location
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NjNbRU
Identifier (type = doi)
doi:10.7282/T33F4Q0Q
Genre (authority = ExL-Esploro)
ETD doctoral
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Copyright
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Open
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Name
Ying Chen
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Copyright holder
Affiliation
Rutgers University. Graduate School - New Brunswick
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Non-exclusive ETD license
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Author Agreement License
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I hereby grant to the Rutgers University Libraries and to my school the non-exclusive right to archive, reproduce and distribute my thesis or dissertation, in whole or in part, and/or my abstract, in whole or in part, in and from an electronic format, subject to the release date subsequently stipulated in this submittal form and approved by my school. I represent and stipulate that the thesis or dissertation and its abstract are my original work, that they do not infringe or violate any rights of others, and that I make these grants as the sole owner of the rights to my thesis or dissertation and its abstract. I represent that I have obtained written permissions, when necessary, from the owner(s) of each third party copyrighted matter to be included in my thesis or dissertation and will supply copies of such upon request by my school. I acknowledge that RU ETD and my school will not distribute my thesis or dissertation or its abstract if, in their reasonable judgment, they believe all such rights have not been secured. I acknowledge that I retain ownership rights to the copyright of my work. I also retain the right to use all or part of this thesis or dissertation in future works, such as articles or books.
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