Home
Resource
Development of 4H-SiC high voltage unipolar power switching devices
PDF
PDF format is widely accepted and good for printing.
Plug-in required
PDF-1(7.79 MB)
Citation & Export
View Usage Statistics
Staff View

Citation & Export
Hide

Simple citation

Alexandrov, Petre. Development of 4H-SiC high voltage unipolar power switching devices. Retrieved from https://doi.org/doi:10.7282/T3T72HNF

Export

Click here for information about Citation Management Tools at Rutgers.

Statistics
Hide

Description

TitleDevelopment of 4H-SiC high voltage unipolar power switching devices
NameAlexandrov, Petre (author); Zhao, Jian (chair); Jiang, Wei (internal member); Tayahi, Moncef (internal member); Weiner, Maurice (outside member); Rutgers University; Graduate School - New Brunswick
Date Created
Other Date2009-10 (degree)
SubjectElectrical and Computer Engineering, High voltages, Switching circuits
Extentviii, 139 p. : ill.
Description4H-SiC is a promising material for switching high power and high temperature device applications. The superior properties of SiC, such as wider band-gap and higher value of critical electric field allow significant reduction in device on-resistance compared to Si power devices of similar voltage ratings. In addition the excellent thermal conductivity of SiC alleviates the device cooling requirements and allows design of smaller and more efficient systems. Several advantages of the unipolar power switches over the bipolar switches make them desirable for fast switching applications. Voltage-controlled normally-off devices are particularly attractive for practical applications because of simpler gate-drive circuitry. The advantages of the vertical JFET device being free of the problems related to oxide reliability, as compared to the MOSFET, recognize it as an excellent candidate for high power, high temperature switching applications.
Device designs for normally-off and normally-on unipolar switches with blocking voltages from 400V to 11kV are proposed, based on a pure vertical trenched and implanted structure. Two different junction termination structures (junction termination extension and guard rings) are designed and successfully implemented. A fabrication process is designed to achieve a simple and reliable self-aligned fabrication process. The fabrication challenges are discussed and ways to improve the process are identified. Three different devices were designed and fabricated.
The world’s first normally-off 4H-SiC TIVJFET with a blocking voltage of 11kV was demonstrated, showing low specific on-resistance of 124mOhm.cm2.
Normally-off and normally-on 4H-SiC High Frequency TIVJFETs with blocking voltages up to 400V were demonstrated. 3.3A-397V normally-off capability was achieved for a single die, corresponding to a high power of 1310 W/die. This corresponds to a class B operation RF power of 164W for a single die. Cut-off frequency fT= 0.9 to 1.5 GHz was reached.
In the 1200V class devices a normally-on 4H-SiC TIVJFET with guard ring termination and substantially simplified processing was also demonstrated. The highest blocking voltage achieved was 1562V with a specific on-resistance of 2.8mOhm.cm2 at VDS=0.5V and VGS=2.5V and a current gain of 1495. The lowest specific on resistance achieved was 2.2mOhm.cm2 at VDS=0.5V and VGS=2.5V with a current gain of 1454 and a blocking voltage of 1232V.
NotePh.D.
NoteIncludes bibliographical references (p. 131-133)
Noteby Petre Alexandrov
Genretheses, ETD doctoral
Persistent URLhttps://doi.org/doi:10.7282/T3T72HNF
Languageeng
CollectionGraduate School - New Brunswick Electronic Theses and Dissertations
Organization NameRutgers, The State University of New Jersey
RightsThe author owns the copyright to this work.
Version 8.5.5
Rutgers University Libraries - Copyright ©2024