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Development of 4H-SiC high voltage unipolar power switching devices
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TypeOfResource
Text
TitleInfo
(ID = T-1)
Title
Development of 4H-SiC high voltage unipolar power switching devices
SubTitle
PartName
PartNumber
NonSort
Identifier
(displayLabel = );
(invalid = )
ETD_2013
Identifier
(type = hdl)
http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.000051772
Language
(objectPart = )
LanguageTerm
(authority = ISO639-2);
(type = code)
eng
Genre
(authority = marcgt)
theses
Subject
(ID = SBJ-1);
(authority = RUETD)
Topic
Electrical and Computer Engineering
Subject
(ID = SBJ-2);
(authority = ETD-LCSH)
Topic
High voltages
Subject
(ID = SBJ-3);
(authority = ETD-LCSH)
Topic
Switching circuits
Abstract
4H-SiC is a promising material for switching high power and high temperature device applications. The superior properties of SiC, such as wider band-gap and higher value of critical electric field allow significant reduction in device on-resistance compared to Si power devices of similar voltage ratings. In addition the excellent thermal conductivity of SiC alleviates the device cooling requirements and allows design of smaller and more efficient systems. Several advantages of the unipolar power switches over the bipolar switches make them desirable for fast switching applications. Voltage-controlled normally-off devices are particularly attractive for practical applications because of simpler gate-drive circuitry. The advantages of the vertical JFET device being free of the problems related to oxide reliability, as compared to the MOSFET, recognize it as an excellent candidate for high power, high temperature switching applications.
Device designs for normally-off and normally-on unipolar switches with blocking voltages from 400V to 11kV are proposed, based on a pure vertical trenched and implanted structure. Two different junction termination structures (junction termination extension and guard rings) are designed and successfully implemented. A fabrication process is designed to achieve a simple and reliable self-aligned fabrication process. The fabrication challenges are discussed and ways to improve the process are identified. Three different devices were designed and fabricated.
The world’s first normally-off 4H-SiC TIVJFET with a blocking voltage of 11kV was demonstrated, showing low specific on-resistance of 124mOhm.cm2.
Normally-off and normally-on 4H-SiC High Frequency TIVJFETs with blocking voltages up to 400V were demonstrated. 3.3A-397V normally-off capability was achieved for a single die, corresponding to a high power of 1310 W/die. This corresponds to a class B operation RF power of 164W for a single die. Cut-off frequency fT= 0.9 to 1.5 GHz was reached.
In the 1200V class devices a normally-on 4H-SiC TIVJFET with guard ring termination and substantially simplified processing was also demonstrated. The highest blocking voltage achieved was 1562V with a specific on-resistance of 2.8mOhm.cm2 at VDS=0.5V and VGS=2.5V and a current gain of 1495. The lowest specific on resistance achieved was 2.2mOhm.cm2 at VDS=0.5V and VGS=2.5V with a current gain of 1454 and a blocking voltage of 1232V.
Device designs for normally-off and normally-on unipolar switches with blocking voltages from 400V to 11kV are proposed, based on a pure vertical trenched and implanted structure. Two different junction termination structures (junction termination extension and guard rings) are designed and successfully implemented. A fabrication process is designed to achieve a simple and reliable self-aligned fabrication process. The fabrication challenges are discussed and ways to improve the process are identified. Three different devices were designed and fabricated.
The world’s first normally-off 4H-SiC TIVJFET with a blocking voltage of 11kV was demonstrated, showing low specific on-resistance of 124mOhm.cm2.
Normally-off and normally-on 4H-SiC High Frequency TIVJFETs with blocking voltages up to 400V were demonstrated. 3.3A-397V normally-off capability was achieved for a single die, corresponding to a high power of 1310 W/die. This corresponds to a class B operation RF power of 164W for a single die. Cut-off frequency fT= 0.9 to 1.5 GHz was reached.
In the 1200V class devices a normally-on 4H-SiC TIVJFET with guard ring termination and substantially simplified processing was also demonstrated. The highest blocking voltage achieved was 1562V with a specific on-resistance of 2.8mOhm.cm2 at VDS=0.5V and VGS=2.5V and a current gain of 1495. The lowest specific on resistance achieved was 2.2mOhm.cm2 at VDS=0.5V and VGS=2.5V with a current gain of 1454 and a blocking voltage of 1232V.
PhysicalDescription
Form
(authority = gmd)
electronic resource
Extent
viii, 139 p. : ill.
InternetMediaType
application/pdf
InternetMediaType
text/xml
Note
(type = degree)
Ph.D.
Note
(type = bibliographic history)
Includes bibliographical references (p. 131-133)
Note
(type = statement of responsibility)
by Petre Alexandrov
Name
(ID = NAME-1);
(type = personal)
NamePart
(type = family)
Alexandrov
NamePart
(type = given)
Petre
Role
RoleTerm
(authority = RULIB);
(type = )
author
DisplayForm
Petre Alexandrov
Name
(ID = NAME-2);
(type = personal)
NamePart
(type = family)
Zhao
NamePart
(type = given)
Jian
Role
RoleTerm
(authority = RULIB);
(type = )
chair
Affiliation
Advisory Committee
DisplayForm
Jian H Zhao
Name
(ID = NAME-3);
(type = personal)
NamePart
(type = family)
Jiang
NamePart
(type = given)
Wei
Role
RoleTerm
(authority = RULIB);
(type = )
internal member
Affiliation
Advisory Committee
DisplayForm
Wei Jiang
Name
(ID = NAME-4);
(type = personal)
NamePart
(type = family)
Tayahi
NamePart
(type = given)
Moncef
Role
RoleTerm
(authority = RULIB);
(type = )
internal member
Affiliation
Advisory Committee
DisplayForm
Moncef Tayahi
Name
(ID = NAME-5);
(type = personal)
NamePart
(type = family)
Weiner
NamePart
(type = given)
Maurice
Role
RoleTerm
(authority = RULIB);
(type = )
outside member
Affiliation
Advisory Committee
DisplayForm
Maurice Weiner
Name
(ID = NAME-1);
(type = corporate)
NamePart
Rutgers University
Role
RoleTerm
(authority = RULIB);
(type = )
degree grantor
Name
(ID = NAME-2);
(type = corporate)
NamePart
Graduate School - New Brunswick
Role
RoleTerm
(authority = RULIB);
(type = )
school
OriginInfo
DateCreated
(point = );
(qualifier = exact)
2009
DateOther
(qualifier = exact);
(type = degree)
2009-10
Place
PlaceTerm
(type = code)
xx
RelatedItem
(type = host)
TitleInfo
Title
Rutgers University Electronic Theses and Dissertations
Identifier
(type = RULIB)
ETD
RelatedItem
(type = host)
TitleInfo
Title
Graduate School - New Brunswick Electronic Theses and Dissertations
Identifier
(type = local)
rucore19991600001
Location
PhysicalLocation
(authority = marcorg);
(displayLabel = Rutgers, The State University of New Jersey)
NjNbRU
Identifier
(type = doi)
doi:10.7282/T3T72HNF
Genre
(authority = ExL-Esploro)
ETD doctoral
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Rights
RightsDeclaration
(AUTHORITY = GS);
(ID = rulibRdec0006)
The author owns the copyright to this work.
Copyright
Status
Copyright protected
Notice
Note
Availability
Status
Open
Reason
Permission or license
Note
RightsHolder
(ID = PRH-1);
(type = personal)
Name
FamilyName
Alexandrov
GivenName
Petre
Role
Copyright holder
RightsEvent
(ID = RE-1);
(AUTHORITY = rulib)
Type
Permission or license
Label
Place
DateTime
Detail
AssociatedEntity
(ID = AE-1);
(AUTHORITY = rulib)
Role
Copyright holder
Name
Petre Alexandrov
Affiliation
Rutgers University. Graduate School - New Brunswick
AssociatedObject
(ID = AO-1);
(AUTHORITY = rulib)
Type
License
Name
Author Agreement License
Detail
I hereby grant to the Rutgers University Libraries and to my school the non-exclusive right to archive, reproduce and distribute my thesis or dissertation, in whole or in part, and/or my abstract, in whole or in part, in and from an electronic format, subject to the release date subsequently stipulated in this submittal form and approved by my school. I represent and stipulate that the thesis or dissertation and its abstract are my original work, that they do not infringe or violate any rights of others, and that I make these grants as the sole owner of the rights to my thesis or dissertation and its abstract. I represent that I have obtained written permissions, when necessary, from the owner(s) of each third party copyrighted matter to be included in my thesis or dissertation and will supply copies of such upon request by my school. I acknowledge that RU ETD and my school will not distribute my thesis or dissertation or its abstract if, in their reasonable judgment, they believe all such rights have not been secured. I acknowledge that I retain ownership rights to the copyright of my work. I also retain the right to use all or part of this thesis or dissertation in future works, such as articles or books.
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Technical
ContentModel
ETD
MimeType
(TYPE = file)
application/pdf
MimeType
(TYPE = container)
application/x-tar
FileSize
(UNIT = bytes)
8181760
Checksum
(METHOD = SHA1)
34512a7e31de2215f1ea45160c411493c6924ab1
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