RUcore: Rutgers University Community Repository
Surface and interface modification of alternative semiconductor materials for advanced transistors
Descriptive
TypeOfResource
Text
TitleInfo
(ID = T-1)
Title
Surface and interface modification of alternative semiconductor materials for advanced transistors
SubTitle
PartName
PartNumber
NonSort
Identifier
(displayLabel = );
(invalid = )
ETD_1868
Identifier
(type = hdl)
http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.000052258
Language
(objectPart = )
LanguageTerm
(authority = ISO639-2);
(type = code)
eng
Genre
(authority = marcgt)
theses
Subject
(ID = SBJ-1);
(authority = RUETD)
Topic
Chemistry and Chemical Biology
Subject
(ID = SBJ-2);
(authority = ETD-LCSH)
Topic
Semiconductors
Subject
(ID = SBJ-3);
(authority = ETD-LCSH)
Topic
Metal oxide semiconductor field-effect transistors
Abstract
Alternative semiconductor materials have the potential to replace silicon in next generation transistors. However, the lack of a stable insulating oxide such as SiO2 with high quality electrical properties prevents the further fabrication of competitive metal oxide semiconductor field effect transistors (MOSFETs). Germanium and gallium arsenide, two widely investigated semiconductor materials, have high prospects for generating high quality surfaces and interfaces between the dielectric layer and the semiconductor.
In this thesis, wet chemistry cleaning methods have successfully removed the native oxide and other impurities on the Ge and GaAs surface. With further sulfur passivation in (NH4)2S solution, a clean passivated Ge and GaAs surface can be formed which shows appropriate stability and reliability for fabrication. Physical and chemical characterization has been performed on multilayer film structures after the high-κ dielectric films are grown by atomic layer deposition. Electric properties of the MOSFET confirm that the sulfur passivation has greatly decreased the interface state density. The convenience and low cost of wet chemistry cleaning and passivation provide a reliable strategy for the application of alternative semiconductor materials like Ge and GaAs in future transistors and related devices.
In this thesis, wet chemistry cleaning methods have successfully removed the native oxide and other impurities on the Ge and GaAs surface. With further sulfur passivation in (NH4)2S solution, a clean passivated Ge and GaAs surface can be formed which shows appropriate stability and reliability for fabrication. Physical and chemical characterization has been performed on multilayer film structures after the high-κ dielectric films are grown by atomic layer deposition. Electric properties of the MOSFET confirm that the sulfur passivation has greatly decreased the interface state density. The convenience and low cost of wet chemistry cleaning and passivation provide a reliable strategy for the application of alternative semiconductor materials like Ge and GaAs in future transistors and related devices.
PhysicalDescription
Form
(authority = gmd)
electronic resource
Extent
ix, 31 p. : ill.
InternetMediaType
application/pdf
InternetMediaType
text/xml
Note
(type = degree)
M.S.
Note
(type = bibliography)
Includes bibliographical references (p. 29-31)
Note
(type = statement of responsibility)
by Qi Jiang
Name
(ID = NAME-1);
(type = personal)
NamePart
(type = family)
Jiang
NamePart
(type = given)
Qi
NamePart
(type = termsOfAddress)
NamePart
(type = date)
1981-
Role
RoleTerm
(authority = RULIB);
(type = )
author
Description
DisplayForm
Qi Jiang
Name
(ID = NAME-2);
(type = personal)
NamePart
(type = family)
Garfunkel
NamePart
(type = given)
Eric
Role
RoleTerm
(authority = RULIB);
(type = )
chair
Affiliation
Advisory Committee
DisplayForm
Eric Garfunkel
Name
(ID = NAME-3);
(type = personal)
NamePart
(type = family)
Li
NamePart
(type = given)
Jing
Role
RoleTerm
(authority = RULIB);
(type = )
internal member
Affiliation
Advisory Committee
DisplayForm
Jing Li
Name
(ID = NAME-4);
(type = personal)
NamePart
(type = family)
Cotter
NamePart
(type = given)
Martha
Role
RoleTerm
(authority = RULIB);
(type = )
internal member
Affiliation
Advisory Committee
DisplayForm
Martha Cotter
Name
(ID = NAME-1);
(type = corporate)
NamePart
Rutgers University
Role
RoleTerm
(authority = RULIB);
(type = )
degree grantor
Name
(ID = NAME-2);
(type = corporate)
NamePart
Graduate School - New Brunswick
Role
RoleTerm
(authority = RULIB);
(type = )
school
OriginInfo
DateCreated
(point = );
(qualifier = exact)
2009
DateOther
(qualifier = exact);
(type = degree)
2009-10
Place
PlaceTerm
(type = code)
xx
RelatedItem
(type = host)
TitleInfo
Title
Rutgers University Electronic Theses and Dissertations
Identifier
(type = RULIB)
ETD
RelatedItem
(type = host)
TitleInfo
Title
Graduate School - New Brunswick Electronic Theses and Dissertations
Identifier
(type = local)
rucore19991600001
Location
PhysicalLocation
(authority = marcorg);
(displayLabel = Rutgers, The State University of New Jersey)
NjNbRU
Identifier
(type = doi)
doi:10.7282/T3MW2H9N
Genre
(authority = ExL-Esploro)
ETD graduate
Back to the top
Rights
RightsDeclaration
(AUTHORITY = GS);
(ID = rulibRdec0006)
The author owns the copyright to this work.
Copyright
Status
Copyright protected
Notice
Note
Availability
Status
Open
Reason
Permission or license
Note
RightsHolder
(ID = PRH-1);
(type = personal)
Name
FamilyName
Jiang
GivenName
Qi
Role
Copyright Holder
RightsEvent
(AUTHORITY = rulib);
(ID = RE-1)
Type
Permission or license
Label
Place
DateTime
2009-05-28 18:58:05
Detail
AssociatedEntity
(AUTHORITY = rulib);
(ID = AE-1)
Role
Copyright holder
Name
Qi Jiang
Affiliation
Rutgers University. Graduate School - New Brunswick
AssociatedObject
(AUTHORITY = rulib);
(ID = AO-1)
Type
License
Name
Author Agreement License
Detail
I hereby grant to the Rutgers University Libraries and to my school the non-exclusive right to archive, reproduce and distribute my thesis or dissertation, in whole or in part, and/or my abstract, in whole or in part, in and from an electronic format, subject to the release date subsequently stipulated in this submittal form and approved by my school. I represent and stipulate that the thesis or dissertation and its abstract are my original work, that they do not infringe or violate any rights of others, and that I make these grants as the sole owner of the rights to my thesis or dissertation and its abstract. I represent that I have obtained written permissions, when necessary, from the owner(s) of each third party copyrighted matter to be included in my thesis or dissertation and will supply copies of such upon request by my school. I acknowledge that RU ETD and my school will not distribute my thesis or dissertation or its abstract if, in their reasonable judgment, they believe all such rights have not been secured. I acknowledge that I retain ownership rights to the copyright of my work. I also retain the right to use all or part of this thesis or dissertation in future works, such as articles or books.
RightsEvent
(AUTHORITY = rulib);
(ID = RE-2)
Type
Embargo
Label
Place
DateTime
Detail
365 days
AssociatedObject
(AUTHORITY = );
(ID = )
Type
Detail
Back to the top
Technical
ContentModel
ETD
MimeType
(TYPE = file)
application/pdf
MimeType
(TYPE = container)
application/x-tar
FileSize
(UNIT = bytes)
583680
Checksum
(METHOD = SHA1)
266fe22e92fed53d33568f8d7a3fba0aa4b7589d
Back to the top
Statistical Profile