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Development of lead-free piezoelectric thin films by pulsed laser deposition

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Text
TitleInfo (ID = T-1)
Title
Development of lead-free piezoelectric thin films by pulsed laser deposition
Identifier
ETD_2458
Identifier (type = hdl)
http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.000052807
Language
LanguageTerm (authority = ISO639-2); (type = code)
eng
Genre (authority = marcgt)
theses
Subject (ID = SBJ-1); (authority = RUETD)
Topic
Materials Science and Engineering
Subject (ID = SBJ-2); (authority = ETD-LCSH)
Topic
Piezoelectric materials
Subject (ID = SBJ-3); (authority = ETD-LCSH)
Topic
Piezoelectric ceramics
Subject (ID = SBJ-4); (authority = ETD-LCSH)
Topic
Thin films
Subject (ID = SBJ-5); (authority = ETD-LCSH)
Topic
Ferroelectric devices
Abstract (type = abstract)
As a high performance piezoelectric material widely used in sensors, actuators and other electronic devices, lead zirconate titanate (PZT) ceramics have been the center of attention for many years. However, the toxicity of these materials and their exposure to the environment during processing steps, such as calcination, sintering, machining as well as problems in recycling and disposal have been major concerns regarding their usage all around the globe for the past couple of decades. Consequently, utilizing lead-based materials for many commercial applications have been recently restricted in Europe and Asia and measures are being taken in United States as well. Therefore, there is an urgent need for lead-free piezoelectrics whose properties are comparable to those of well-known PZT materials. Recently, the discovery of ultra-high piezoelectric activity in the ternary lead-free KNaNbO3-LiTaO3-LiSbO3 (KNN-LT-LS) and (Bi,Na)TiO3-(Bi,K)TiO3-BaTiO3 (BNT-BKT-BT) systems have given hope for alternatives to PZT. Furthermore, the demand for new generation of environment-friendly functional devices, utilizing piezoelectric materials, inspired a new surge in lead-free piezoelectric thin film research. In this study, an attempt has been made to explore the development of lead-free piezoelectric thin films by Pulsed Laser Deposition (PLD) on SrTiO3 substrate. While the growth and development process of KNN-LT-LS thin films was the primary goal of this thesis, a preliminary effort was also made to fabricate and characterize BNT-BKT-BT thin films. In a comprehensive and systematic process optimization study in conjunction with X-ray diffractometry, the phase evolution, stoichiometry, and growth orientation of the films are monitored as a function of deposition conditions including temperature and ambient oxygen partial pressure. Processing parameters such as substrate temperature and pressure are shown to be highly dominant in determining the phase and composition of the films. Oxygen partial pressure has shown to control the chemical composition of the films through solid-gaseous phase equilibrium and substrate temperature has mostly influenced the growth mode and microstructure. Findings of this study has shown that 300-500 nm single-phase epitaxial KNN-LT-LS and BNT-BKT-BT thin films could indeed be obtained at a temperature of 700-750 oC and 300-400 mTorr of oxygen partial pressure. Following a series of studies on effect of doping, it was revealed that addition of 1 mol% Mn to KNN-LT-LS composition resulted in a significant suppression of leakage current and enhancement of polarization saturation. A remanent polarization of 16 C/cm2 and coercive field of 20 kV/cm were measured for such thin film, which are comparable to those of hard PZT counterparts. Also, a high remanent polarization and coercive field of 30 C/cm2 and 95 kV/cm were achieved in 350 nm BNT-BKT-BT thin films. Longitudinal (d33) and transverse (e31,f) piezoelectric coefficients of KNN-LT-LS thin films were found to be 55 pm/V and -4.5 C/m2 respectively, prepared at the optimized conditions, whereas 350 nm BNT-BKT-BT thin films exhibited an e31,f of -2.25 C/m2. The results of this study present the great potential of KNN-LT-LS and BNT-BKT-BT thin films for piezoelectric MEMS devices and provide a baseline for future investigations on lead-free piezoelectric thin films.
PhysicalDescription
Form (authority = gmd)
electronic resource
Extent
xvi, 193 p. : ill.
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application/pdf
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text/xml
Note (type = degree)
Ph.D.
Note
Includes abstract
Note (type = bibliography)
Includes bibliographical references
Note
Vita
Note (type = statement of responsibility)
by Maryam Abazari Torghabeh
Name (ID = NAME-1); (type = personal)
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Abazari Torghabeh
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Maryam
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1982-
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author
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Maryam Abazari Torghabeh
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Safari
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Ahmad
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chair
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Advisory Committee
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Ahmad Safari
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Khachaturyan
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Armen
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internal member
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Advisory Committee
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Armen Khachaturyan
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Chhowalla
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Manish
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internal member
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Advisory Committee
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Manish Chhowalla
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Klein
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Lisa
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internal member
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Advisory Committee
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Lisa Klein
Name (ID = NAME-6); (type = personal)
NamePart (type = family)
Cheong
NamePart (type = given)
Sang-Wook
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outside member
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Advisory Committee
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Sang-Wook Cheong
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NamePart
Rutgers University
Role
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degree grantor
Name (ID = NAME-2); (type = corporate)
NamePart
Graduate School - New Brunswick
Role
RoleTerm (authority = RULIB)
school
OriginInfo
DateCreated (qualifier = exact)
2010
DateOther (qualifier = exact); (type = degree)
2010
Place
PlaceTerm (type = code)
xx
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Title
Rutgers University Electronic Theses and Dissertations
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ETD
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Title
Graduate School - New Brunswick Electronic Theses and Dissertations
Identifier (type = local)
rucore19991600001
Location
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NjNbRU
Identifier (type = doi)
doi:10.7282/T36T0MQ3
Genre (authority = ExL-Esploro)
ETD doctoral
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The author owns the copyright to this work.
Copyright
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Copyright protected
Availability
Status
Open
Reason
Permission or license
RightsHolder (ID = PRH-1); (type = personal)
Name
FamilyName
Abazari Torghabeh
GivenName
Maryam
Role
Copyright Holder
RightsEvent (ID = RE-1); (AUTHORITY = rulib)
Type
Permission or license
DateTime
2010-02-09 16:18:57
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Role
Copyright holder
Name
Maryam Abazari Torghabeh
Affiliation
Rutgers University. Graduate School - New Brunswick
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Type
License
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Author Agreement License
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I hereby grant to the Rutgers University Libraries and to my school the non-exclusive right to archive, reproduce and distribute my thesis or dissertation, in whole or in part, and/or my abstract, in whole or in part, in and from an electronic format, subject to the release date subsequently stipulated in this submittal form and approved by my school. I represent and stipulate that the thesis or dissertation and its abstract are my original work, that they do not infringe or violate any rights of others, and that I make these grants as the sole owner of the rights to my thesis or dissertation and its abstract. I represent that I have obtained written permissions, when necessary, from the owner(s) of each third party copyrighted matter to be included in my thesis or dissertation and will supply copies of such upon request by my school. I acknowledge that RU ETD and my school will not distribute my thesis or dissertation or its abstract if, in their reasonable judgment, they believe all such rights have not been secured. I acknowledge that I retain ownership rights to the copyright of my work. I also retain the right to use all or part of this thesis or dissertation in future works, such as articles or books.
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