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Power devices and integrated circuits based on 4H-SiC lateral JFETs

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TypeOfResource
Text
TitleInfo (ID = T-1)
Title
Power devices and integrated circuits based on 4H-SiC lateral JFETs
Identifier
ETD_2511
Identifier (type = hdl)
http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.000053215
Language
LanguageTerm (authority = ISO639-2); (type = code)
eng
Genre (authority = marcgt)
theses
Subject (ID = SBJ-1); (authority = RUETD)
Topic
Electrical and Computer Engineering
Subject (ID = SBJ-2); (authority = ETD-LCSH)
Topic
Silicon carbide--Electric properties
Subject (ID = SBJ-3); (authority = ETD-LCSH)
Topic
Power electronics
Abstract (type = abstract)
Silicon carbide (SiC) is a wide-bandgap semiconductor that has drawn significant research interest for the next-generation power electronics due to its superior electrical properties. Excellent device performance has been repeatedly demonstrated by SiC vertical power devices. However, for lateral power devices that offer the unique advantage of possible monolithic integration of a power electronics system-on-chip, the progress has been limited. This dissertation describes the 4H-SiC vertical-channel lateral JFET (VC-LJFET) technology that provides a suitable solution for power integration applications. Power devices based on this structure have a trenched-and-implanted vertical channel and a carefully designed lateral drift region, enabling normally-off operation with a high-voltage blocking capability. Low-voltage (LV) versions of VC-LJFET feature nearly identical device structures with a reduced drift length, and can be readily fabricated on the same wafer with the power devices. Essential components for a power integrated circuit, such as gate drive buffers, can be thus implemented monolithically on the VC-LJFET technology platform. This dissertation research starts with the process improvement investigation for the TI-JFET structure. Particularly, a novel ohmic contact scheme is developed using Ni to replace the troubling process in TI-VJFETs. The entire process flow of VC-LJFET is then designed and demonstrated in experiments, leading to the world’s first demonstration of a normally-off lateral power JFET in SiC. As of today, power JFETs fabricated in this technology are still representing the best-performing lateral power transistors in SiC and silicon. Based on the VC-LJFET structure, low-voltage circuits critical to the power integration applications are investigated. Gate drive buffer provides the interface between low-voltage control circuits and the power device, and is recognized as a key component for an integrated power electronics system. A thorough design, modeling and optimization work on the LJFET-based gate drive circuits is described. These buffer drivers using resistor or transistor loads will enable high-frequency switching of the power LJFETs at megahertz levels. The results achieved in this research strongly suggest the feasibility of SiC power integration technologies in general, as well as the suitability of the SiC VC-LJFET platform for such applications in particular.
PhysicalDescription
Form (authority = gmd)
electronic resource
Extent
viii, 142 p. : ill.
InternetMediaType
application/pdf
InternetMediaType
text/xml
Note (type = degree)
Ph.D.
Note
Includes abstract
Note
Vita
Note (type = bibliography)
Includes bibliographical references
Note (type = statement of responsibility)
by Ming Su
Name (ID = NAME-1); (type = personal)
NamePart (type = family)
Su
NamePart (type = given)
Ming
NamePart (type = date)
1980-
Role
RoleTerm (authority = RULIB)
author
DisplayForm
Ming Su
Name (ID = NAME-2); (type = personal)
NamePart (type = family)
Sheng
NamePart (type = given)
Kuang
Role
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chair
Affiliation
Advisory Committee
DisplayForm
Kuang Sheng
Name (ID = NAME-3); (type = personal)
NamePart (type = family)
Zhao
NamePart (type = given)
Jian H
Role
RoleTerm (authority = RULIB)
co-chair
Affiliation
Advisory Committee
DisplayForm
Jian H Zhao
Name (ID = NAME-4); (type = personal)
NamePart (type = family)
Lu
NamePart (type = given)
Yicheng
Role
RoleTerm (authority = RULIB)
internal member
Affiliation
Advisory Committee
DisplayForm
Yicheng Lu
Name (ID = NAME-5); (type = personal)
NamePart (type = family)
Cheung
NamePart (type = given)
Kin P
Role
RoleTerm (authority = RULIB)
outside member
Affiliation
Advisory Committee
DisplayForm
Kin P Cheung
Name (ID = NAME-1); (type = corporate)
NamePart
Rutgers University
Role
RoleTerm (authority = RULIB)
degree grantor
Name (ID = NAME-2); (type = corporate)
NamePart
Graduate School - New Brunswick
Role
RoleTerm (authority = RULIB)
school
OriginInfo
DateCreated (qualifier = exact)
2010
DateOther (qualifier = exact); (type = degree)
2010
Place
PlaceTerm (type = code)
xx
RelatedItem (type = host)
TitleInfo
Title
Rutgers University Electronic Theses and Dissertations
Identifier (type = RULIB)
ETD
RelatedItem (type = host)
TitleInfo
Title
Graduate School - New Brunswick Electronic Theses and Dissertations
Identifier (type = local)
rucore19991600001
Location
PhysicalLocation (authority = marcorg); (displayLabel = Rutgers, The State University of New Jersey)
NjNbRU
Identifier (type = doi)
doi:10.7282/T37944SV
Genre (authority = ExL-Esploro)
ETD doctoral
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Rights

RightsDeclaration (AUTHORITY = GS); (ID = rulibRdec0006)
The author owns the copyright to this work.
Copyright
Status
Copyright protected
Availability
Status
Open
Reason
Permission or license
RightsHolder (ID = PRH-1); (type = personal)
Name
FamilyName
Su
GivenName
Ming
Role
Copyright Holder
RightsEvent (ID = RE-1); (AUTHORITY = rulib)
Type
Permission or license
DateTime
2010-03-25 20:24:55
AssociatedEntity (ID = AE-1); (AUTHORITY = rulib)
Role
Copyright holder
Name
Ming Su
Affiliation
Rutgers University. Graduate School - New Brunswick
AssociatedObject (ID = AO-1); (AUTHORITY = rulib)
Type
License
Name
Author Agreement License
Detail
I hereby grant to the Rutgers University Libraries and to my school the non-exclusive right to archive, reproduce and distribute my thesis or dissertation, in whole or in part, and/or my abstract, in whole or in part, in and from an electronic format, subject to the release date subsequently stipulated in this submittal form and approved by my school. I represent and stipulate that the thesis or dissertation and its abstract are my original work, that they do not infringe or violate any rights of others, and that I make these grants as the sole owner of the rights to my thesis or dissertation and its abstract. I represent that I have obtained written permissions, when necessary, from the owner(s) of each third party copyrighted matter to be included in my thesis or dissertation and will supply copies of such upon request by my school. I acknowledge that RU ETD and my school will not distribute my thesis or dissertation or its abstract if, in their reasonable judgment, they believe all such rights have not been secured. I acknowledge that I retain ownership rights to the copyright of my work. I also retain the right to use all or part of this thesis or dissertation in future works, such as articles or books.
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Technical

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ETD
MimeType (TYPE = file)
application/pdf
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application/x-tar
FileSize (UNIT = bytes)
2990080
Checksum (METHOD = SHA1)
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