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Simulation, modeling and characterization of SiC devices
Descriptive
TypeOfResource
Text
TitleInfo
(ID = T-1)
Title
Simulation, modeling and characterization of SiC devices
Identifier
ETD_2534
Identifier
(type = hdl)
http://hdl.rutgers.edu/1782.1/rucore10001600001.ETD.000053492
Language
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eng
Genre
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theses
Subject
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(authority = RUETD)
Topic
Electrical and Computer Engineering
Subject
(ID = SBJ-2);
(authority = ETD-LCSH)
Topic
Silicon carbide
Subject
(ID = SBJ-3);
(authority = ETD-LCSH)
Topic
Metal oxide semiconductor field-effect transistors
Abstract
(type = abstract)
With superior material properties, Silicon carbide (SiC) power devices show great potential for high-power density, high temperature switching applications. Among all the power device structures, SiC MOSFET attracts the most attention because of its high gate input impedance, simple gate control and fast switching speed. However, low inversion channel mobility, high near-interface state density close to the conduction band edge, questionable oxide reliability as well as theoretical limit on the device figure-of-merit still remain to be significant challenges to the development of SiC power MOSFETs. In this dissertation, all of the above challenges are addressed from various approaches. First, simulations on the super-junction structure show that the unipolar theoretical limit of SiC can be broken even with the state-of-the-art processing technologies. An easy-to-implement analytical model is developed for calculations of the blocking voltage, specific on-resistance and charge imbalance effects of 4H-SiC super-junction devices. This model is validated by extensive numerical simulations with a large variety of device parameters. Device design and optimization using this model are also presented. Second, a wafer-level Hall mobility measurement technique is developed to measure channel mobility more accurately, more efficiently and more cost-effectively. Device characterization and development are much more convenient by using this technique. With this method, further explorations of interactions between interface traps and channel carriers as well as device degradation mechanisms become possible. Third, reliability of SiO2 on 4H-SiC is characterized with time dependent dielectric breakdown (TDDB) measurements at various temperatures and electric fields. Lifetime prediction to normal operation conditions suggests that the oxide on SiC has a characteristic lifetime of 10 years at 375° C if the oxide electric field is kept below 4.6 MV/cm. The observed excellent reliability data contradict the widespread belief that the oxide on SiC is intrinsically limited by its physical properties. Detailed discussions are provided to re-examine the arguments leading to the misconception.
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electronic resource
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xv, 111 p. : ill.
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Note
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Ph.D.
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Includes abstract
Note
Vita
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(type = bibliography)
Includes bibliographical references
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(type = statement of responsibility)
by Liangchun Yu
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Yu
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Liangchun
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1981-
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author
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Liangchun Yu
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Sheng
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Kuang
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chair
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Kuang Sheng
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(type = family)
Lu
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Yicheng
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internal member
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Advisory Committee
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Yicheng Lu
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(type = family)
Jiang
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Wei
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Wei Jiang
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Cheung
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(type = given)
Kin P.
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outside member
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Advisory Committee
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Kin P. Cheung
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Rutgers University
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degree grantor
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Graduate School - New Brunswick
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school
OriginInfo
DateCreated
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2010
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2010
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xx
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TitleInfo
Title
Rutgers University Electronic Theses and Dissertations
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ETD
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Title
Graduate School - New Brunswick Electronic Theses and Dissertations
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rucore19991600001
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NjNbRU
Identifier
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doi:10.7282/T3K64J5T
Genre
(authority = ExL-Esploro)
ETD doctoral
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Rights
RightsDeclaration
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The author owns the copyright to this work.
Copyright
Status
Copyright protected
Availability
Status
Open
Reason
Permission or license
RightsHolder
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(type = personal)
Name
FamilyName
Yu
GivenName
Liangchun
Role
Copyright Holder
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DateTime
2010-04-05 17:33:15
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Name
Liangchun Yu
Affiliation
Rutgers University. Graduate School - New Brunswick
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Author Agreement License
Detail
I hereby grant to the Rutgers University Libraries and to my school the non-exclusive right to archive, reproduce and distribute my thesis or dissertation, in whole or in part, and/or my abstract, in whole or in part, in and from an electronic format, subject to the release date subsequently stipulated in this submittal form and approved by my school. I represent and stipulate that the thesis or dissertation and its abstract are my original work, that they do not infringe or violate any rights of others, and that I make these grants as the sole owner of the rights to my thesis or dissertation and its abstract. I represent that I have obtained written permissions, when necessary, from the owner(s) of each third party copyrighted matter to be included in my thesis or dissertation and will supply copies of such upon request by my school. I acknowledge that RU ETD and my school will not distribute my thesis or dissertation or its abstract if, in their reasonable judgment, they believe all such rights have not been secured. I acknowledge that I retain ownership rights to the copyright of my work. I also retain the right to use all or part of this thesis or dissertation in future works, such as articles or books.
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Technical
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ETD
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application/pdf
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application/x-tar
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1484800
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