Power electronics systems require robust power switches to operate at high temperatures to meet the demand for smaller and higher power density systems. The improvement in material technology has made 4H–Silicon Carbide (SiC) a promising material for power electronics applications. This is because SiC has superior properties such as high electric breakdown field, high thermal conductivity and high bandgap. Compared to other devices made on SiC, such as BJTs and IGBTs, SiC gate turn-off thyristors (GTOs) are favorable devices for power electronic applications due to their ability to operate at high current and high voltage levels under high temperature, which is attributed to conductivity modulation in the drift layer of the device. Furthermore, SiC GTOs offer several advantages over Si thyristors and Si GTOs such as compactness, higher current density, faster switching, and higher temperature operation. This dissertation presents the design, fabrication and characterization of 4H-SiC GTOs, along with the study of the multistep junction termination extension (MJTE) for high power 4H-SiC devices. The physics-based MJTE design and optimization via numerical simulations has been studied. The 3-step MJTE with the maximum blocking voltage of 7630 V, which is 90% of the ideal breakdown voltage, has been demonstrated. The design of MJTE has been applied to the fabrication of GTOs. 0.1 cm2 4H-SiC greater than 6 kV GTOs have been demonstrated with MJTE utilized successfully. A relatively large area, high voltage 4H-SiC GTO that exhibits encouraging characteristic at the on- and off-state, low leakage current and high yield is presented. Initial pulse testing results shows that the fabricated GTOs can handle both the high current density and the high turn-off speed.
Subject (authority = RUETD)
Topic
Electrical and Computer Engineering
RelatedItem (type = host)
TitleInfo
Title
Rutgers University Electronic Theses and Dissertations
Identifier (type = RULIB)
ETD
Identifier
ETD_4922
PhysicalDescription
Form (authority = gmd)
electronic resource
InternetMediaType
application/pdf
InternetMediaType
text/xml
Extent
xii, 106 p. : ill.
Note (type = degree)
Ph.D.
Note (type = bibliography)
Includes bibliographical references
Note (type = vita)
Includes vita
Note (type = statement of responsibility)
by Lei Lin
Subject (authority = ETD-LCSH)
Topic
Silicon carbide--Electric properties
Subject (authority = ETD-LCSH)
Topic
Electronics--Equipment and supplies
RelatedItem (type = host)
TitleInfo
Title
Graduate School - New Brunswick Electronic Theses and Dissertations
Identifier (type = local)
rucore19991600001
Location
PhysicalLocation (authority = marcorg); (displayLabel = Rutgers, The State University of New Jersey)
Rutgers University. Graduate School - New Brunswick
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Type
License
Name
Author Agreement License
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I hereby grant to the Rutgers University Libraries and to my school the non-exclusive right to archive, reproduce and distribute my thesis or dissertation, in whole or in part, and/or my abstract, in whole or in part, in and from an electronic format, subject to the release date subsequently stipulated in this submittal form and approved by my school. I represent and stipulate that the thesis or dissertation and its abstract are my original work, that they do not infringe or violate any rights of others, and that I make these grants as the sole owner of the rights to my thesis or dissertation and its abstract. I represent that I have obtained written permissions, when necessary, from the owner(s) of each third party copyrighted matter to be included in my thesis or dissertation and will supply copies of such upon request by my school. I acknowledge that RU ETD and my school will not distribute my thesis or dissertation or its abstract if, in their reasonable judgment, they believe all such rights have not been secured. I acknowledge that I retain ownership rights to the copyright of my work. I also retain the right to use all or part of this thesis or dissertation in future works, such as articles or books.