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Novel nanophotonic structures and devices for optical interconnect and lithography applications
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Tan, Jun. Novel nanophotonic structures and devices for optical interconnect and lithography applications. Retrieved from https://doi.org/doi:10.7282/T3Q23X9N

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TitleNovel nanophotonic structures and devices for optical interconnect and lithography applications
NameTan, Jun (author); Jiang, Wei (chair); Lu, Yicheng (internal member); Jeon, Jaeseok (internal member); Lai, Warren (internal member); Lu, Ming (outside member); Rutgers University; Graduate School - New Brunswick
Date Created2013
Other Date2013-10 (degree)
SubjectElectrical and Computer Engineering, Photonics, Silicon--Electric properties, Lithography
Extentxii, 92 p. : ill.
DescriptionSilicon photonics witnessed spectacular progress in the past decade. Optical interconnects, low cost telecommunications and optical sensors are three main application areas. Photonic crystal is composed of periodic scatterers. When the scatterers are of the proper size and the periodicity is on the order of wavelength, all the reflections and refractions will cancel, forming photonic band-gap forbidding light to penetrate into it. If we remove one line of the scatterers, the light will be confined in this "wire" tightly, forming a photonic crystal waveguide (PCW). To date, most of the PCW research has been focused on the even TE-like mode. However, a PCW often has an odd TE-like mode inside the photonic band gap exhibiting the slow-light effect as well. We demonstrated a novel scheme to control the excitation symmetry for a slow-light odd-mode in a PCW, and investigated the spectral signature. An odd-mode Mach-Zehnder coupler was introduced to excite a high-purity odd-mode with 20 dB signal-to-background contrast. Assisted by a mixed-mode Mach-Zehnder coupler, slow-light mode-beating can be observed, and determine the group index of this odd-mode. With slow-light enhancement, this odd-mode can help enable miniaturized devices based on transforming mode symmetry. The evolution of the transmission spectrum of a PCW under electro-optic tuning was studied in the band of an odd TE-like mode. The spectral signature of the interband scattering from the TM-like mode to the odd TE-like mode was characterized at various bias levels. The shift of the odd-mode band was determined. Simulations were performed to explain the spectral shift based on electro-optic and thermo-optic effects in the active photonic crystal structures. Potential impact of interband scattering on indirect interband-transition-based optical isolators is discussed and potential remedies are offered. Nanopatterning is one of the key steps in nano-fabrication. We applied the negative index material (NIM) to enhance the evanescent wave in the near-field region and excite surface plasmons. Superlens devices working at 193nm DUV wavelength were fabricated, imaged on the photoresist, and characterized by AFM. A series of Finite-difference time-domain (FDTD) simulations were performed to analyze the imaging mechanism of the superlens.
NotePh.D.
NoteIncludes bibliographical references
NoteIncludes vita
Noteby Jun Tan
Genretheses, ETD doctoral
Persistent URLhttps://doi.org/doi:10.7282/T3Q23X9N
Languageeng
CollectionGraduate School - New Brunswick Electronic Theses and Dissertations
Organization NameRutgers, The State University of New Jersey
RightsThe author owns the copyright to this work.
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