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Structure and chemistry of defect passivation at the interface between silicon dioxide and silicon carbide

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Title
Structure and chemistry of defect passivation at the interface between silicon dioxide and silicon carbide
Name (type = personal)
NamePart (type = family)
Xu
NamePart (type = given)
Yi
NamePart (type = date)
1986-
DisplayForm
Yi Xu
Role
RoleTerm (authority = RULIB)
author
Name (type = personal)
NamePart (type = family)
Garfunkel
NamePart (type = given)
Eric L
DisplayForm
Eric L Garfunkel
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
chair
Name (type = personal)
NamePart (type = family)
Hinch
NamePart (type = given)
Jane
DisplayForm
Jane Hinch
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
internal member
Name (type = personal)
NamePart (type = family)
Asefa
NamePart (type = given)
Tewodros
DisplayForm
Tewodros Asefa
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
internal member
Name (type = personal)
NamePart (type = family)
Feldman
NamePart (type = given)
Leonard C
DisplayForm
Leonard C Feldman
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
outside member
Name (type = corporate)
NamePart
Rutgers University
Role
RoleTerm (authority = RULIB)
degree grantor
Name (type = corporate)
NamePart
Graduate School - New Brunswick
Role
RoleTerm (authority = RULIB)
school
TypeOfResource
Text
Genre (authority = marcgt)
theses
OriginInfo
DateCreated (qualifier = exact)
2014
DateOther (qualifier = exact); (type = degree)
2014-10
CopyrightDate (encoding = w3cdtf)
2014
Place
PlaceTerm (type = code)
xx
Language
LanguageTerm (authority = ISO639-2b); (type = code)
eng
Abstract (type = abstract)
Silicon carbide (SiC) is a wide bandgap semiconductor which has material properties well-suited for high-power, high-temperature electronics applications. The performance of SiC transistors is limited by electrical defects formed at the SiO2/SiC interface under high temperature oxidation. A central goal of this work is to improve our atomic level understanding of electrical defects in SiC devices, and to further develop methods to minimize defects. Introduction of interfacial nitrogen (N) or phosphorus (P) reduces the interface (charge) trap density, increases the SiC charge mobility (in the semiconductor channel), and thus device performance. This dissertation is focused on the chemistry of the SiO2/SiC interface, the critical interface in future SiC-based devices. We address issues of composition, structure, chemical bonding, and reaction behavior of N and P that we have used to improve device performance. We report photoemission and ion scattering studies to determine the concentrations of N and P passivating agents at the SiO2/SiC interface, and develop a more complete understanding of the mechanism and kinetics for the passivation processes on different crystallographic surfaces. The study shows that N (and P) passivated SiO2/SiC structures have a thin oxy-nitride (oxy-phosphide) interface dielectric layer that cannot be removed by a buffered HF etchant. The same dielectric structures are completely etched when formed on Si. Atomic scale modeling, combined with our experimental observations, results in the suggestion of likely bonding structures of N and P at the SiO2/SiC interface. The depth profile of N and P at SiO2/SiC interface has also been established and provides further insights into the nature of N and P as surface passivating additives.
Subject (authority = RUETD)
Topic
Chemistry and Chemical Biology
Subject (authority = ETD-LCSH)
Topic
Silicon carbide--Electric properties
RelatedItem (type = host)
TitleInfo
Title
Rutgers University Electronic Theses and Dissertations
Identifier (type = RULIB)
ETD
Identifier
ETD_5733
PhysicalDescription
Form (authority = gmd)
electronic resource
InternetMediaType
application/pdf
InternetMediaType
text/xml
Extent
1 online resource (xvii, 139 p. : ill.)
Note (type = degree)
Ph.D.
Note (type = bibliography)
Includes bibliographical references
Note (type = statement of responsibility)
by Yi Xu
RelatedItem (type = host)
TitleInfo
Title
Graduate School - New Brunswick Electronic Theses and Dissertations
Identifier (type = local)
rucore19991600001
Location
PhysicalLocation (authority = marcorg); (displayLabel = Rutgers, The State University of New Jersey)
NjNbRU
Identifier (type = doi)
doi:10.7282/T3CV4KB5
Genre (authority = ExL-Esploro)
ETD doctoral
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Rights

RightsDeclaration (ID = rulibRdec0006)
The author owns the copyright to this work.
RightsHolder (type = personal)
Name
FamilyName
Xu
GivenName
Yi
Role
Copyright Holder
RightsEvent
Type
Permission or license
DateTime (encoding = w3cdtf); (qualifier = exact); (point = start)
2014-07-15 17:35:34
AssociatedEntity
Name
YI XU
Role
Copyright holder
Affiliation
Rutgers University. Graduate School - New Brunswick
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Type
License
Name
Author Agreement License
Detail
I hereby grant to the Rutgers University Libraries and to my school the non-exclusive right to archive, reproduce and distribute my thesis or dissertation, in whole or in part, and/or my abstract, in whole or in part, in and from an electronic format, subject to the release date subsequently stipulated in this submittal form and approved by my school. I represent and stipulate that the thesis or dissertation and its abstract are my original work, that they do not infringe or violate any rights of others, and that I make these grants as the sole owner of the rights to my thesis or dissertation and its abstract. I represent that I have obtained written permissions, when necessary, from the owner(s) of each third party copyrighted matter to be included in my thesis or dissertation and will supply copies of such upon request by my school. I acknowledge that RU ETD and my school will not distribute my thesis or dissertation or its abstract if, in their reasonable judgment, they believe all such rights have not been secured. I acknowledge that I retain ownership rights to the copyright of my work. I also retain the right to use all or part of this thesis or dissertation in future works, such as articles or books.
Copyright
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Copyright protected
Availability
Status
Open
Reason
Permission or license
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RULTechMD (ID = TECHNICAL1)
ContentModel
ETD
OperatingSystem (VERSION = 5.1)
windows xp
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