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Zinc oxide-based resistive switching devices

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TitleInfo
Title
Zinc oxide-based resistive switching devices
Name (type = personal)
NamePart (type = family)
Zhang
NamePart (type = given)
Yang
NamePart (type = date)
1983-
DisplayForm
Yang Zhang
Role
RoleTerm (authority = RULIB)
author
Name (type = personal)
NamePart (type = family)
Lu
NamePart (type = given)
Yicheng
DisplayForm
Yicheng Lu
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
chair
Name (type = personal)
NamePart (type = family)
Jeon
NamePart (type = given)
Jaeseok
DisplayForm
Jaeseok Jeon
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
internal member
Name (type = personal)
NamePart (type = family)
Lai
NamePart (type = given)
Warren
DisplayForm
Warren Lai
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
internal member
Name (type = personal)
NamePart (type = family)
Birnie
NamePart (type = given)
Dunbar
DisplayForm
Dunbar Birnie
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
outside member
Name (type = corporate)
NamePart
Rutgers University
Role
RoleTerm (authority = RULIB)
degree grantor
Name (type = corporate)
NamePart
Graduate School - New Brunswick
Role
RoleTerm (authority = RULIB)
school
TypeOfResource
Text
Genre (authority = marcgt)
theses
OriginInfo
DateCreated (qualifier = exact)
2014
DateOther (qualifier = exact); (type = degree)
2014-10
CopyrightDate (encoding = w3cdtf)
2014
Place
PlaceTerm (type = code)
xx
Language
LanguageTerm (authority = ISO639-2b); (type = code)
eng
Abstract (type = abstract)
Recently, resistive switching (RS) memory devices have attracted increasing attentions due to their potential applications in the next-generation nonvolatile memory. Zinc Oxide (ZnO) - based RS devices possess promising features, such as well-controlled switching properties by in-situ doping and alloying, low-temperature fabrication processes, superior radiation hardness, and low cost. The goal of the research is to study the feasibility of using the transitional metal (TM) doped ZnO for making RS devices. The Fe-doped ZnO (FeZnO) is used to make the bipolar and unipolar RS. The FeZnO is grown through MOCVD. Fe is a deep-level donor in ZnO, and Fe doping leads to better device thermal stability and larger value at the high resistance state (HRS) for switching. For the Ag/FeZnO/Pt bipolar RS structures, the ratio of the HRS over the low resistance state (LRS) of 3.8×10^2 is achieved. The dominant conduction mechanisms are attributed to the Poole-Frenkel emission at the HRS and Ohmic behavior at the LRS, respectively. A FeZnO/MgO bi-layer (BL) is used to replace the FeZnO single layer (SL) to form an Ag/FeZnO/MgO/Pt bipolar RS structure. This BL device demonstrates a higher RHRS/RLRS ratio (~106) than the SL counterpart. For the Au/FeZnO/MgO/Pt unipolar RS device, the RHRS/RLRS ratio of 2.4×10^6 at 1V is achieved. In order to reduce the processing temperature, the Ni-doped ZnO/MgO BL structure is adapted to make the RS devices using the sputtering - MOCVD hybrid deposition. The Ni doping enhances the compensation of oxygen deficiency in ZnO, resulting in larger HRS values. By controlling the compliance current during the “SET” process, three different reversible RS modes, i.e. threshold switching, volatile switching, and memory switching are obtained. Compared with the memory switching, the volatile switching possesses lower power consumption and better HRS stability. Furthermore, the different compliance currents lead to the different LRS values, which could be used for the multi-level per storage cell applications. The electrical characteristics and microstructure analysis suggest that the compliance current setting affects the formation and rupture of the metallic filaments, leading to the conversion of different switching modes. The FeZnO switching resistor (R) is vertically integrated with a ZnO diode (D) to form the 1D1R structure, which overcomes the cross-talk in the 1R-based crossbar switching matrix. The 1D1R exhibits high RHRS/RLRS ratio, excellent rectifying characteristics, and robust retention. The new ZnO RS technology presents great impact on the future classes of memory devices for applications such as switching matrix, multi-level storage, and 3D non-volatile memory architecture.
Subject (authority = RUETD)
Topic
Electrical and Computer Engineering
Subject (authority = ETD-LCSH)
Topic
Flash memories (Computers)
Subject (authority = ETD-LCSH)
Topic
Zinc oxide
RelatedItem (type = host)
TitleInfo
Title
Rutgers University Electronic Theses and Dissertations
Identifier (type = RULIB)
ETD
Identifier
ETD_5713
PhysicalDescription
Form (authority = gmd)
electronic resource
InternetMediaType
application/pdf
InternetMediaType
text/xml
Extent
1 online resource (xiii, 105 p. : ill.)
Note (type = degree)
Ph.D.
Note (type = bibliography)
Includes bibliographical references
Note (type = statement of responsibility)
by Yang Zhang
RelatedItem (type = host)
TitleInfo
Title
Graduate School - New Brunswick Electronic Theses and Dissertations
Identifier (type = local)
rucore19991600001
Location
PhysicalLocation (authority = marcorg); (displayLabel = Rutgers, The State University of New Jersey)
NjNbRU
Identifier (type = doi)
doi:10.7282/T3FN17V5
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Rights

RightsDeclaration (ID = rulibRdec0006)
The author owns the copyright to this work.
RightsHolder (type = personal)
Name
FamilyName
Zhang
GivenName
Yang
Role
Copyright Holder
RightsEvent
Type
Permission or license
DateTime (encoding = w3cdtf); (qualifier = exact); (point = start)
2014-06-17 00:09:18
AssociatedEntity
Name
YANG ZHANG
Role
Copyright holder
Affiliation
Rutgers University. Graduate School - New Brunswick
AssociatedObject
Type
License
Name
Author Agreement License
Detail
I hereby grant to the Rutgers University Libraries and to my school the non-exclusive right to archive, reproduce and distribute my thesis or dissertation, in whole or in part, and/or my abstract, in whole or in part, in and from an electronic format, subject to the release date subsequently stipulated in this submittal form and approved by my school. I represent and stipulate that the thesis or dissertation and its abstract are my original work, that they do not infringe or violate any rights of others, and that I make these grants as the sole owner of the rights to my thesis or dissertation and its abstract. I represent that I have obtained written permissions, when necessary, from the owner(s) of each third party copyrighted matter to be included in my thesis or dissertation and will supply copies of such upon request by my school. I acknowledge that RU ETD and my school will not distribute my thesis or dissertation or its abstract if, in their reasonable judgment, they believe all such rights have not been secured. I acknowledge that I retain ownership rights to the copyright of my work. I also retain the right to use all or part of this thesis or dissertation in future works, such as articles or books.
Copyright
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Copyright protected
Availability
Status
Open
Reason
Permission or license
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RULTechMD (ID = TECHNICAL1)
ContentModel
ETD
OperatingSystem (VERSION = 5.1)
windows xp
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