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Bismuth ferrite based thin films, nanofibers, and field effect transistor devices

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TitleInfo
Title
Bismuth ferrite based thin films, nanofibers, and field effect transistor devices
Name (type = personal)
NamePart (type = family)
Rivera-Beltrán
NamePart (type = given)
Rut
NamePart (type = date)
1988-
DisplayForm
Rut Rivera-Beltrán
Role
RoleTerm (authority = RULIB)
author
Name (type = personal)
NamePart (type = family)
Safari
NamePart (type = given)
Ahmad
DisplayForm
Ahmad Safari
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
chair
Name (type = personal)
NamePart (type = family)
Klein
NamePart (type = given)
Lisa
DisplayForm
Lisa Klein
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
internal member
Name (type = personal)
NamePart (type = family)
Chhowalla
NamePart (type = given)
Manish
DisplayForm
Manish Chhowalla
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
internal member
Name (type = personal)
NamePart (type = family)
Abazari
NamePart (type = given)
Maryam
DisplayForm
Maryam Abazari
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
outside member
Name (type = corporate)
NamePart
Rutgers University
Role
RoleTerm (authority = RULIB)
degree grantor
Name (type = corporate)
NamePart
Graduate School - New Brunswick
Role
RoleTerm (authority = RULIB)
school
TypeOfResource
Text
Genre (authority = marcgt)
theses
OriginInfo
DateCreated (encoding = w3cdtf); (qualifier = exact)
2015
DateOther (qualifier = exact); (type = degree)
2015-01
CopyrightDate (encoding = w3cdtf); (qualifier = exact)
2015
Place
PlaceTerm (type = code)
xx
Language
LanguageTerm (authority = ISO639-2b); (type = code)
eng
Abstract (type = abstract)
In this research an attempt has been made to explore bismuth ferrite thin films with low leakage current and nanofibers with high photoconductivity. Thin films were deposited with pulsed laser deposition (PLD) method. An attempt has been made to develop thin films under different deposition parameters with following target compositions: i) 0.6BiFeO3-0.4(Bi0.5K0.5)TiO3 (BFO-BKT) and ii) bi-layered 0.88Bi0.5Na0.5TiO3–0.08Bi0.5K0.5TiO3–0.04BaTiO3/BiFeO3 (BNT-BKT-BT/BFO). BFO-BKT thin film shows suppressed leakage current by about four orders of magnitude which in turn improve the ferroelectric and dielectric properties of the films. The optimum remnant polarization is 19 µC.cm-2 at the oxygen partial pressure of 300 mtorr. The BNT-BKT-BT/BFO bi-layered thin films exhibited ferroelectric behavior as: Pr = 22.0 µC.cm-2, Ec = 100 kV.cm-1 and r = 140. The leakage current of bi-layered thin films have been reduced two orders of magnitude compare to un-doped bismuth ferrite. Bismuth ferrite nanofibers were developed by electrospinning technique and its electronic properties such as photoconductivity and field effect transistor performance were investigated extensively. Nanofibers were deposited by electrospinning of sol-gel solution on SiO2/Si substrate at driving voltage of 10 kV followed by heat treatment at 550 ◦C for 2 hours. The composition analysis through energy dispersive detector and electron energy loss spectroscopy revealed the heterogeneous nature of the composition with Bi rich and Fe deficient regions. X-ray photoelectron spectroscopy results confirmed the combination of Fe3+ and Fe2+ valence state in the fibers. The photoresponse result is almost hundred times higher for a fiber of 40 nm diameter compared to a fiber with 100 nm diameter. This effect is described by a size dependent surface recombination mechanism. A single and multiple BFO nanofibers field effect transistors devices were fabricated and characterized. Bismuth ferrite FET behaves as p-type semiconductor. The carrier mobility for a single nanofiber FET was found as 0.2 cm2/V.s at 100 V driving voltage, while the carrier mobility of multiple nanofibers FET was maintained at 10 V driving voltage. The results of this study present the versatility of BFO in the form of thin films and nanofibers for different electronic applications such as ferroelectric memories, transistor and light sensor.
Subject (authority = RUETD)
Topic
Materials Science and Engineering
Subject (authority = ETD-LCSH)
Topic
Thin films
Subject (authority = ETD-LCSH)
Topic
Bismuth
Subject (authority = ETD-LCSH)
Topic
Nanofibers
RelatedItem (type = host)
TitleInfo
Title
Rutgers University Electronic Theses and Dissertations
Identifier (type = RULIB)
ETD
Identifier
ETD_6110
PhysicalDescription
Form (authority = gmd)
electronic resource
InternetMediaType
application/pdf
InternetMediaType
text/xml
Extent
1 online resource (xx, 172 p. : ill.)
Note (type = degree)
Ph.D.
Note (type = bibliography)
Includes bibliographical references
Note (type = statement of responsibility)
by Rut Rivera-Beltrán
RelatedItem (type = host)
TitleInfo
Title
Graduate School - New Brunswick Electronic Theses and Dissertations
Identifier (type = local)
rucore19991600001
Location
PhysicalLocation (authority = marcorg); (displayLabel = Rutgers, The State University of New Jersey)
NjNbRU
Identifier (type = doi)
doi:10.7282/T37H1M99
Genre (authority = ExL-Esploro)
ETD doctoral
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Rights

RightsDeclaration (ID = rulibRdec0006)
The author owns the copyright to this work.
RightsHolder (type = personal)
Name
FamilyName
Rivera-Beltrán
GivenName
Rut
Role
Copyright Holder
RightsEvent
Type
Permission or license
DateTime (encoding = w3cdtf); (qualifier = exact); (point = start)
2014-12-23 13:54:17
AssociatedEntity
Name
Rut Rivera
Role
Copyright holder
Affiliation
Rutgers University. Graduate School - New Brunswick
AssociatedObject
Type
License
Name
Author Agreement License
Detail
I hereby grant to the Rutgers University Libraries and to my school the non-exclusive right to archive, reproduce and distribute my thesis or dissertation, in whole or in part, and/or my abstract, in whole or in part, in and from an electronic format, subject to the release date subsequently stipulated in this submittal form and approved by my school. I represent and stipulate that the thesis or dissertation and its abstract are my original work, that they do not infringe or violate any rights of others, and that I make these grants as the sole owner of the rights to my thesis or dissertation and its abstract. I represent that I have obtained written permissions, when necessary, from the owner(s) of each third party copyrighted matter to be included in my thesis or dissertation and will supply copies of such upon request by my school. I acknowledge that RU ETD and my school will not distribute my thesis or dissertation or its abstract if, in their reasonable judgment, they believe all such rights have not been secured. I acknowledge that I retain ownership rights to the copyright of my work. I also retain the right to use all or part of this thesis or dissertation in future works, such as articles or books.
Copyright
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Copyright protected
Availability
Status
Open
Reason
Permission or license
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RULTechMD (ID = TECHNICAL1)
ContentModel
ETD
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windows xp
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