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Intrinsic charge transport at interfaces between organic semiconductor and high-k dielectrics
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Wang, Szu-Ying. Intrinsic charge transport at interfaces between organic semiconductor and high-k dielectrics. Retrieved from https://doi.org/doi:10.7282/T3MK6FM8

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TitleIntrinsic charge transport at interfaces between organic semiconductor and high-k dielectrics
NameWang, Szu-Ying (author); Garfunkel, Eric (chair); O'Carroll, Deirdre (internal member); Brennan, John (internal member); Rutgers University; Graduate School - New Brunswick
Date Created2015
Other Date2015-01 (degree)
SubjectChemistry and Chemical Biology, Dielectrics, Organic semiconductors
Extent1 online resource (vi, 24 p. : ill.)
DescriptionRubrene single crystals have the highest field effect mobility (~20cm2/Vs) among other organic single crystals for now. However, the charge transport mechanisms are still unsure. Some people think it is band-like transporting while others think it’s small polarons hopping. Understanding the transporting mechanisms can help us optimize the device performance. It has been found that high-k materials will reduce the mobility of organic semiconductors due to the formation of Fröhlich polarons. And the field effect mobility is reversely proportional to the dielectric constants of dielectric layers. Until now, people have been fabricating devices with different methods to grow high-k dielectric layers on top of different piece of rubrene single crystals. In this way, it will create a large error instead of accurately study the relations between dielectric constants and mobility. In this thesis, we introduce a novel method called “vacuum lamination” in order to study the system more carefully. Through this method, a single piece of rubrene crystal with pre-painted contacts can be examined repeatedly with removable dielectric layers laminate on top of it. And we used atomic layer deposition (ALD) system to deposit high-k dielectric material (Al2O3) on top of polyimide substrates which can be easily removed later without harming the surface of rubrene crystal. Different thicknesses of dielectric layers have been studied. In this study, we found the mobility reduced significantly after rubrene in contact with high-k material, and the mobility recovered after removing it.
NoteM.S.
NoteIncludes bibliographical references
Noteby Szu-Ying Wang
Genretheses, ETD graduate
Persistent URLhttps://doi.org/doi:10.7282/T3MK6FM8
Languageeng
CollectionGraduate School - New Brunswick Electronic Theses and Dissertations
Organization NameRutgers, The State University of New Jersey
RightsThe author owns the copyright to this work.
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