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Intrinsic charge transport at interfaces between organic semiconductor and high-k dielectrics
Descriptive
TitleInfo
Title
Intrinsic charge transport at interfaces between organic semiconductor and high-k dielectrics
Name
(type = personal)
NamePart
(type = family)
Wang
NamePart
(type = given)
Szu-Ying
DisplayForm
Szu-Ying Wang
Role
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author
Name
(type = personal)
NamePart
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Garfunkel
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(type = given)
Eric
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Eric Garfunkel
Affiliation
Advisory Committee
Role
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(authority = RULIB)
chair
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NamePart
(type = family)
O'Carroll
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Deirdre
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Deirdre O'Carroll
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Advisory Committee
Role
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(authority = RULIB)
internal member
Name
(type = personal)
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(type = family)
Brennan
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John
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John Brennan
Affiliation
Advisory Committee
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internal member
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Rutgers University
Role
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(authority = RULIB)
degree grantor
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Graduate School - New Brunswick
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school
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Text
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theses
OriginInfo
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2015
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2015-01
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2015
Place
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xx
Language
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eng
Abstract
(type = abstract)
Rubrene single crystals have the highest field effect mobility (~20cm2/Vs) among other organic single crystals for now. However, the charge transport mechanisms are still unsure. Some people think it is band-like transporting while others think it’s small polarons hopping. Understanding the transporting mechanisms can help us optimize the device performance. It has been found that high-k materials will reduce the mobility of organic semiconductors due to the formation of Fröhlich polarons. And the field effect mobility is reversely proportional to the dielectric constants of dielectric layers. Until now, people have been fabricating devices with different methods to grow high-k dielectric layers on top of different piece of rubrene single crystals. In this way, it will create a large error instead of accurately study the relations between dielectric constants and mobility. In this thesis, we introduce a novel method called “vacuum lamination” in order to study the system more carefully. Through this method, a single piece of rubrene crystal with pre-painted contacts can be examined repeatedly with removable dielectric layers laminate on top of it. And we used atomic layer deposition (ALD) system to deposit high-k dielectric material (Al2O3) on top of polyimide substrates which can be easily removed later without harming the surface of rubrene crystal. Different thicknesses of dielectric layers have been studied. In this study, we found the mobility reduced significantly after rubrene in contact with high-k material, and the mobility recovered after removing it.
Subject
(authority = RUETD)
Topic
Chemistry and Chemical Biology
Subject
(authority = ETD-LCSH)
Topic
Dielectrics
Subject
(authority = ETD-LCSH)
Topic
Organic semiconductors
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TitleInfo
Title
Rutgers University Electronic Theses and Dissertations
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ETD_6119
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electronic resource
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application/pdf
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text/xml
Extent
1 online resource (vi, 24 p. : ill.)
Note
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M.S.
Note
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Includes bibliographical references
Note
(type = statement of responsibility)
by Szu-Ying Wang
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TitleInfo
Title
Graduate School - New Brunswick Electronic Theses and Dissertations
Identifier
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rucore19991600001
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NjNbRU
Identifier
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doi:10.7282/T3MK6FM8
Genre
(authority = ExL-Esploro)
ETD graduate
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Rights
RightsDeclaration
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The author owns the copyright to this work.
RightsHolder
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Name
FamilyName
Wang
GivenName
Szu-Ying
Role
Copyright Holder
RightsEvent
Type
Permission or license
DateTime
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2014-12-26 23:37:00
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Name
Szu-Ying Wang
Role
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Affiliation
Rutgers University. Graduate School - New Brunswick
AssociatedObject
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License
Name
Author Agreement License
Detail
I hereby grant to the Rutgers University Libraries and to my school the non-exclusive right to archive, reproduce and distribute my thesis or dissertation, in whole or in part, and/or my abstract, in whole or in part, in and from an electronic format, subject to the release date subsequently stipulated in this submittal form and approved by my school. I represent and stipulate that the thesis or dissertation and its abstract are my original work, that they do not infringe or violate any rights of others, and that I make these grants as the sole owner of the rights to my thesis or dissertation and its abstract. I represent that I have obtained written permissions, when necessary, from the owner(s) of each third party copyrighted matter to be included in my thesis or dissertation and will supply copies of such upon request by my school. I acknowledge that RU ETD and my school will not distribute my thesis or dissertation or its abstract if, in their reasonable judgment, they believe all such rights have not been secured. I acknowledge that I retain ownership rights to the copyright of my work. I also retain the right to use all or part of this thesis or dissertation in future works, such as articles or books.
RightsEvent
DateTime
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2015-01-31
DateTime
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2017-01-30
Type
Embargo
Detail
Access to this PDF has been restricted at the author's request. It will be publicly available after January 30th, 2017.
Copyright
Status
Copyright protected
Availability
Status
Open
Reason
Permission or license
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Technical
RULTechMD
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ETD
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windows xp
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