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Single crystalline silicon carbide thin film exfoliation for power device applications
Descriptive
TitleInfo
Title
Single crystalline silicon carbide thin film exfoliation for power device applications
Name
(type = personal)
NamePart
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Amarasinghe
NamePart
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Voshadhi Pansilu
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Voshadhi Pansilu Amarasinghe
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author
Name
(type = personal)
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Li
NamePart
(type = given)
Jing
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Jing Li
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Advisory Committee
Role
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chair
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Garfunkel
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Eric
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Eric Garfunkel
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Advisory Committee
Role
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internal member
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(type = family)
Hall
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(type = given)
Gene
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Gene Hall
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Advisory Committee
Role
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internal member
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(type = family)
Celler
NamePart
(type = given)
George K
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George K Celler
Affiliation
Advisory Committee
Role
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(authority = RULIB)
outside member
Name
(type = personal)
NamePart
(type = family)
Feldman
NamePart
(type = given)
Leonard C
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Leonard C Feldman
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Advisory Committee
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outside member
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Rutgers University
Role
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degree grantor
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NamePart
Graduate School - New Brunswick
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school
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Text
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theses
OriginInfo
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2015
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2015-10
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2015
Place
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xx
Language
LanguageTerm
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(type = code)
eng
Abstract
(type = abstract)
Silicon carbide (SiC) is a wide-band gap material used in high power and high current electronic applications because of its high thermal conductivity and high breakdown field. Currently SiC is gaining a lot of attention because of the improvements seen in the SiC-MOSFET and SiC applications in the energy industry. It is of great scientific and practical importance to integrate SiC with digital and analog circuits built on Si because it will give more flexibility for device engineers to come up with circuits with low power loss and faster communication between components. One such way of integrating SiC with Si is by transferring thin-films of SiC to Si or other process compatible substrates such as polycrystalline SiC, sapphire and low grade bulk SiC. In this project, hydrogen ion (H+) implantation assisted exfoliation of single crystalline SiC was used transfer 1 to 5 μm thick films to various handle substrates. Optimum conditions for exfoliation and layer transfer were studied extensively. Once the layer transfer was successful surface quality was studied using AFM and chemical etching was used to flatten the post-exfoliation surface. Finally MOS-capacitors and MOSFETs were fabricated on the transferred films and electrical quality of the transferred films was studied.
Subject
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Topic
Chemistry and Chemical Biology
RelatedItem
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TitleInfo
Title
Rutgers University Electronic Theses and Dissertations
Identifier
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ETD
Identifier
ETD_6669
PhysicalDescription
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electronic resource
InternetMediaType
application/pdf
InternetMediaType
text/xml
Extent
1 online resource (xiii, 141 p. : ill.)
Note
(type = degree)
Ph.D.
Note
(type = bibliography)
Includes bibliographical references
Subject
(authority = ETD-LCSH)
Topic
Silicon carbide
Subject
(authority = ETD-LCSH)
Topic
Thin films
Note
(type = statement of responsibility)
by Voshadhi Pansilu Amarasinghe
RelatedItem
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TitleInfo
Title
Graduate School - New Brunswick Electronic Theses and Dissertations
Identifier
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rucore19991600001
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(displayLabel = Rutgers, The State University of New Jersey)
NjNbRU
Identifier
(type = doi)
doi:10.7282/T34J0H3D
Genre
(authority = ExL-Esploro)
ETD doctoral
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Rights
RightsDeclaration
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The author owns the copyright to this work.
RightsHolder
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Name
FamilyName
Amarasinghe
GivenName
Voshadhi
Role
Copyright Holder
RightsEvent
Type
Permission or license
DateTime
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(qualifier = exact);
(point = start)
2015-08-24 21:25:02
AssociatedEntity
Name
Voshadhi Amarasinghe
Role
Copyright holder
Affiliation
Rutgers University. Graduate School - New Brunswick
AssociatedObject
Type
License
Name
Author Agreement License
Detail
I hereby grant to the Rutgers University Libraries and to my school the non-exclusive right to archive, reproduce and distribute my thesis or dissertation, in whole or in part, and/or my abstract, in whole or in part, in and from an electronic format, subject to the release date subsequently stipulated in this submittal form and approved by my school. I represent and stipulate that the thesis or dissertation and its abstract are my original work, that they do not infringe or violate any rights of others, and that I make these grants as the sole owner of the rights to my thesis or dissertation and its abstract. I represent that I have obtained written permissions, when necessary, from the owner(s) of each third party copyrighted matter to be included in my thesis or dissertation and will supply copies of such upon request by my school. I acknowledge that RU ETD and my school will not distribute my thesis or dissertation or its abstract if, in their reasonable judgment, they believe all such rights have not been secured. I acknowledge that I retain ownership rights to the copyright of my work. I also retain the right to use all or part of this thesis or dissertation in future works, such as articles or books.
RightsEvent
DateTime
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(qualifier = exact);
(point = start)
2015-10-31
DateTime
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2017-10-30
Type
Embargo
Detail
Access to this PDF has been restricted at the author's request. It will be publicly available after October 30th, 2017.
Copyright
Status
Copyright protected
Availability
Status
Open
Reason
Permission or license
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Technical
RULTechMD
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ContentModel
ETD
OperatingSystem
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windows xp
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