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Ion beam analysis of novel materials and devices involving silicon carbide and bismuth selenide

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TitleInfo
Title
Ion beam analysis of novel materials and devices involving silicon carbide and bismuth selenide
Name (type = personal)
NamePart (type = family)
Xu
NamePart (type = given)
Can
NamePart (type = date)
1987-
DisplayForm
Can Xu
Role
RoleTerm (authority = RULIB)
author
Name (type = personal)
NamePart (type = family)
Gustafsson
NamePart (type = given)
Torgny
DisplayForm
Torgny Gustafsson
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
chair
Name (type = personal)
NamePart (type = family)
Oh
NamePart (type = given)
Seongshik
DisplayForm
Seongshik Oh
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
internal member
Name (type = personal)
NamePart (type = family)
Schnetzer
NamePart (type = given)
Stephen
DisplayForm
Stephen Schnetzer
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
internal member
Name (type = personal)
NamePart (type = family)
Andrei
NamePart (type = given)
Natan
DisplayForm
Natan Andrei
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
internal member
Name (type = personal)
NamePart (type = family)
Copel
NamePart (type = given)
Matthew
DisplayForm
Matthew Copel
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
outside member
Name (type = corporate)
NamePart
Rutgers University
Role
RoleTerm (authority = RULIB)
degree grantor
Name (type = corporate)
NamePart
Graduate School - New Brunswick
Role
RoleTerm (authority = RULIB)
school
TypeOfResource
Text
Genre (authority = marcgt)
theses
OriginInfo
DateCreated (encoding = w3cdtf); (qualifier = exact)
2015
DateOther (qualifier = exact); (type = degree)
2015-10
CopyrightDate (encoding = w3cdtf); (qualifier = exact)
2015
Place
PlaceTerm (type = code)
xx
Language
LanguageTerm (authority = ISO639-2b); (type = code)
eng
Abstract (type = abstract)
The properties of single crystals, thin films and their surfaces and interfaces have a critical impact on the electrical performance of devices. Analysis of the crystallinity of single crystals, the composition of thin films, surface and interface defects greatly assist the improvement of devices. Ion beams is a unique probe that provides quantitative measures of those properties. In this dissertation, ion beam techniques including Medium Energy Ion Scattering (MEIS), Rutherford Backscattering Spectrometry (RBS), Nuclear Reaction Analysis (NRA) and Helium Ion Microscopy (HIM) are used to analyze silicon carbide and bismuth selenide based structures. The 4H polytype of silicon carbide (SiC) is a promising candidate for high temperature and high power metal-oxide-semiconductor device applications due to its wide bandgap. In such applications high quality surfaces and interfaces are critical. Aspects of surface quality can be determined by backscattering spectrometry with ion channeling, where the channeling energy loss spectrum depicts the surface peaks of the crystal. We find that the SiC surface peaks are in good agreement with theoretical predictions, when including correlations of the thermal vibrations of the atoms. Hydrogen passivation of interface defects by annealing in H2 is a well-established process in silicon technology. Unfortunately this process is not effective in silicon carbide based structures. Another way of inducing hydrogen at the interface is through water vapor exposure. Nuclear Reaction Analysis (NRA) is used to measure the deuterium content in the SiC/SiO2 system induced by heavy water (D2O) anneal. Deuterium uptake in Si/SiO2, SiC(0001)/SiO2, SiC(000-1)/SiO2 and SiC(11-20)/SiO2 are being compared and the amount of deuterium at the interface is correlated with the electrical properties. The structure and chemical compatibility of In2Se3 (a band insulator) and Bi2Se3 (a 3D topological insulator) suggests possible promising applications of In2 Se3/Bi2Se3 devices. Indiffusion of indium into Bi2Se3 will affect the transport properties. We have grown In2Se3/Bi2Se3 thin films on sapphire by Molecular Beam Epitaxy at different temperatures and correlated the indium diffusion with growth temperature and mobility.
Subject (authority = RUETD)
Topic
Physics and Astronomy
RelatedItem (type = host)
TitleInfo
Title
Rutgers University Electronic Theses and Dissertations
Identifier (type = RULIB)
ETD
Identifier
ETD_6753
PhysicalDescription
Form (authority = gmd)
electronic resource
InternetMediaType
application/pdf
InternetMediaType
text/xml
Extent
1 online resource (xvii, 117 p. : ill.)
Note (type = degree)
Ph.D.
Note (type = bibliography)
Includes bibliographical references
Subject (authority = ETD-LCSH)
Topic
Silicon carbide
Subject (authority = ETD-LCSH)
Topic
Thin films
Note (type = statement of responsibility)
by Can Xu
RelatedItem (type = host)
TitleInfo
Title
Graduate School - New Brunswick Electronic Theses and Dissertations
Identifier (type = local)
rucore19991600001
Location
PhysicalLocation (authority = marcorg); (displayLabel = Rutgers, The State University of New Jersey)
NjNbRU
Identifier (type = doi)
doi:10.7282/T3F47R5H
Genre (authority = ExL-Esploro)
ETD doctoral
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Rights

RightsDeclaration (ID = rulibRdec0006)
The author owns the copyright to this work.
RightsHolder (type = personal)
Name
FamilyName
Xu
GivenName
Can
Role
Copyright Holder
RightsEvent
Type
Permission or license
DateTime (encoding = w3cdtf); (qualifier = exact); (point = start)
2015-09-19 18:10:41
AssociatedEntity
Name
Can Xu
Role
Copyright holder
Affiliation
Rutgers University. Graduate School - New Brunswick
AssociatedObject
Type
License
Name
Author Agreement License
Detail
I hereby grant to the Rutgers University Libraries and to my school the non-exclusive right to archive, reproduce and distribute my thesis or dissertation, in whole or in part, and/or my abstract, in whole or in part, in and from an electronic format, subject to the release date subsequently stipulated in this submittal form and approved by my school. I represent and stipulate that the thesis or dissertation and its abstract are my original work, that they do not infringe or violate any rights of others, and that I make these grants as the sole owner of the rights to my thesis or dissertation and its abstract. I represent that I have obtained written permissions, when necessary, from the owner(s) of each third party copyrighted matter to be included in my thesis or dissertation and will supply copies of such upon request by my school. I acknowledge that RU ETD and my school will not distribute my thesis or dissertation or its abstract if, in their reasonable judgment, they believe all such rights have not been secured. I acknowledge that I retain ownership rights to the copyright of my work. I also retain the right to use all or part of this thesis or dissertation in future works, such as articles or books.
Copyright
Status
Copyright protected
Availability
Status
Open
Reason
Permission or license
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Technical

RULTechMD (ID = TECHNICAL1)
ContentModel
ETD
OperatingSystem (VERSION = 5.1)
windows xp
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