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Voltage-controlled tunable surface acoustic wave devices using multifunctional MgZnO/ZnO structures

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TitleInfo
Title
Voltage-controlled tunable surface acoustic wave devices using multifunctional MgZnO/ZnO structures
Name (type = personal)
NamePart (type = family)
Li
NamePart (type = given)
Rui
DisplayForm
Rui Li
Role
RoleTerm (authority = RULIB)
author
Name (type = personal)
NamePart (type = family)
Lu
NamePart (type = given)
Yicheng
DisplayForm
Yicheng Lu
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
chair
Name (type = personal)
NamePart (type = family)
Jeon
NamePart (type = given)
Jaeseok
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Jaeseok Jeon
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Advisory Committee
Role
RoleTerm (authority = RULIB)
internal member
Name (type = personal)
NamePart (type = family)
Javanmard
NamePart (type = given)
Mehdi
DisplayForm
Mehdi Javanmard
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
internal member
Name (type = personal)
NamePart (type = family)
Birnie
NamePart (type = given)
Dunbar Birnie
DisplayForm
Dunbar Birnie Birnie
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
outside member
Name (type = corporate)
NamePart
Rutgers University
Role
RoleTerm (authority = RULIB)
degree grantor
Name (type = corporate)
NamePart
Graduate School - New Brunswick
Role
RoleTerm (authority = RULIB)
school
TypeOfResource
Text
Genre (authority = marcgt)
theses
OriginInfo
DateCreated (qualifier = exact)
2017
DateOther (qualifier = exact); (type = degree)
2017-01
CopyrightDate (encoding = w3cdtf); (qualifier = exact)
2017
Place
PlaceTerm (type = code)
xx
Language
LanguageTerm (authority = ISO639-2b); (type = code)
eng
Abstract (type = abstract)
Surface acoustic wave (SAW) devices have been widely used for signal processing, frequency control, and sensing applications. It is also emerging as a promising technology for the miniaturized on-chip microfluidic pumping and biomolecule manipulation. Up to date, most SAW devices operate at fixed frequencies. The frequency tunability is highly demanded in advanced wireless communication and sensing systems for programmable and adaptive applications. The tunable SAW devices can extend the effective operating bandwidth, increase functionality and versatility, and reduce the architecture complexity. The goal of this research is to demonstrate the voltage controlled tunable SAW devices using the multifunctional MgZnO- and ZnO-based multilayer structures. Two types of novel tunable SAW devices are designed and fabricated. The first device consists of the Ni-doped piezoelectric ZnO (NZO)/ n-type semiconductor ZnO/GaN/c-Al2O3 multilayer structure. The unique acoustic dispersion relationship in the ZnO/GaN heterostructure generates the multi-mode SAW responses, facilitating high-frequency operation. The acoustoelectric interaction in the piezoelectric-semiconductor structure is used to realize frequency tuning through modulation of free charges in the semiconductor n-ZnO layer and confined charges in the n-ZnO/GaN heterojunction. A dc bias voltage is applied to a Ti/Au gate layer deposited on the path of SAW delay line to control the electrical conductivity for tuning the acoustic velocity. For a device operating at 1.25 GHz, the maximum SAW velocity change of 0.9% is achieved within -25 V to 0 V, equivalent to the frequency change of 11.2 MHz. This voltage-controlled frequency tuning device has potential applications. The ZnO/GaN-based tunable SAW device with a buried interdigital transducer (IDT) is also designed and fabricated. The device operates at 1.35 GHz with frequency tunability of 0.9% at a low biasing voltage range of -12V ~ 0V and expanded linear tuning range. This voltage-controlled frequency tuning device has potential applications in resettable sensors, adaptive signal processing, and secure wireless communication. To extend the multifunctional MgZnO- and ZnO-based tunable SAW technology into the low-cost applications, such as radio-frequency identification (RFID), another prototype of voltage controlled tunable SAW device is directly built on glass substrates using the multifunctional MgZnO/ZnO structure. The dual-input-voltage-controlled tunable SAW device is formed by the integration of a piezoelectric NZO–based SAW delay line with a semiconducting MgZnO (MZO)-based thin film transistor (TFT). The IDT electrodes are buried under the NZO layer. It is found that the interface between MZO channel and SiO2 gate dielectric layer of the TFT significantly impacts on SAW tuning performances. The MZO-SiO2 interface is engineered by inserting an ultrathin MgO layer as a barrier to stop Zn diffusion from MZO into SiO2. The integrated TFT-SAW device with interface modification enables SAW frequency tuning of 0.53% under solely Vgs control. With extra Vds control, the SAW frequency tunability is expanded its tuning range (0.46% - 0.63%). This dual input voltage controlled frequency tuning device on glass technology is promising for low-cost and portable applications such as smart sensors and reconfigurable RFID tags.
Subject (authority = RUETD)
Topic
Electrical and Computer Engineering
RelatedItem (type = host)
TitleInfo
Title
Rutgers University Electronic Theses and Dissertations
Identifier (type = RULIB)
ETD
Identifier
ETD_7774
PhysicalDescription
Form (authority = gmd)
electronic resource
InternetMediaType
application/pdf
InternetMediaType
text/xml
Extent
1 online resource (xv, 119 p. : ill.)
Note (type = degree)
Ph.D.
Note (type = bibliography)
Includes bibliographical references
Subject (authority = ETD-LCSH)
Topic
Zinc oxide
Subject (authority = ETD-LCSH)
Topic
Acoustic surface wave devices
Note (type = statement of responsibility)
by Rui Li
RelatedItem (type = host)
TitleInfo
Title
Graduate School - New Brunswick Electronic Theses and Dissertations
Identifier (type = local)
rucore19991600001
Location
PhysicalLocation (authority = marcorg); (displayLabel = Rutgers, The State University of New Jersey)
NjNbRU
Identifier (type = doi)
doi:10.7282/T3P84FBF
Genre (authority = ExL-Esploro)
ETD doctoral
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Rights

RightsDeclaration (ID = rulibRdec0006)
The author owns the copyright to this work.
RightsHolder (type = personal)
Name
FamilyName
Li
GivenName
Rui
Role
Copyright Holder
RightsEvent
Type
Permission or license
DateTime (encoding = w3cdtf); (qualifier = exact); (point = start)
2016-12-10 16:24:05
AssociatedEntity
Name
Rui Li
Role
Copyright holder
Affiliation
Rutgers University. Graduate School - New Brunswick
AssociatedObject
Type
License
Name
Author Agreement License
Detail
I hereby grant to the Rutgers University Libraries and to my school the non-exclusive right to archive, reproduce and distribute my thesis or dissertation, in whole or in part, and/or my abstract, in whole or in part, in and from an electronic format, subject to the release date subsequently stipulated in this submittal form and approved by my school. I represent and stipulate that the thesis or dissertation and its abstract are my original work, that they do not infringe or violate any rights of others, and that I make these grants as the sole owner of the rights to my thesis or dissertation and its abstract. I represent that I have obtained written permissions, when necessary, from the owner(s) of each third party copyrighted matter to be included in my thesis or dissertation and will supply copies of such upon request by my school. I acknowledge that RU ETD and my school will not distribute my thesis or dissertation or its abstract if, in their reasonable judgment, they believe all such rights have not been secured. I acknowledge that I retain ownership rights to the copyright of my work. I also retain the right to use all or part of this thesis or dissertation in future works, such as articles or books.
RightsEvent
DateTime (encoding = w3cdtf); (qualifier = exact); (point = start)
2017-01-31
DateTime (encoding = w3cdtf); (qualifier = exact); (point = end)
2018-01-31
Type
Embargo
Detail
Access to this PDF has been restricted at the author's request. It will be publicly available after January 31st, 2018.
Copyright
Status
Copyright protected
Availability
Status
Open
Reason
Permission or license
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2016-12-19T15:13:53
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2016-12-19T15:13:53
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