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Computational and experimental study of GaN chemical vapor deposition reactor

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TitleInfo
Title
Computational and experimental study of GaN chemical vapor deposition reactor
Name (type = personal)
NamePart (type = family)
Wong
NamePart (type = given)
Sun
DisplayForm
Sun Wong
Role
RoleTerm (authority = RULIB)
author
Name (type = personal)
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Jaluria
NamePart (type = given)
Yogesh
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Yogesh Jaluria
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Advisory Committee
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chair
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Guo
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Zhixiong
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Zhixiong Guo
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Advisory Committee
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internal member
Name (type = personal)
NamePart (type = family)
Diez-Garias
NamePart (type = given)
F. Javier
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F. Javier Diez-Garias
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Advisory Committee
Role
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internal member
Name (type = personal)
NamePart (type = family)
Bagarney
NamePart (type = given)
Michael
DisplayForm
Michael Bagarney
Affiliation
Advisory Committee
Role
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outside member
Name (type = corporate)
NamePart
Rutgers University
Role
RoleTerm (authority = RULIB)
degree grantor
Name (type = corporate)
NamePart
School of Graduate Studies
Role
RoleTerm (authority = RULIB)
school
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Text
Genre (authority = marcgt)
theses
OriginInfo
DateCreated (qualifier = exact)
2017
DateOther (qualifier = exact); (type = degree)
2017-10
CopyrightDate (encoding = w3cdtf); (qualifier = exact)
2017
Place
PlaceTerm (type = code)
xx
Language
LanguageTerm (authority = ISO639-2b); (type = code)
eng
Abstract (type = abstract)
Gallium Nitride is an important semiconductor that many industries use for consumer products such as RF application for celltowers, LED lighting, and HEMTs for power conversion in EV industry. It's the next generation of semiconductor that will be replacing silicon. To produce GaN, many uses the technique called Chemical Vapor Deposition or CVD. It's a technique that let gaseous chemicals to react with one another and deposit molecule onto a substrate. As more molecules deposit, it grows into a crystalline structure known as thin film semiconductor. As the demand for high-powered and high-efficiency electronics increases, it's important to look at the quality and characteristics of these films, such as the growth rate, and uniformity. A computational study can be used to model and optimize the CVD reactor to yield favorable operating conditions. With the aid of experimental data, computational CVD study will grant us very important information to help bring down the cost of GaN based semiconductors. A 3D non-reactive model was used initially for flow and temperature study. Then it evolves into a full chemistry model where the growth rate and the uniformity are part of the study. The results are expected to lead to a better understanding of the basic mechanisms for predicting and optimizing the operating conditions. Commercially software was used, with modifications, and the results obtained are discussed in details.
Subject (authority = RUETD)
Topic
Mechanical and Aerospace Engineering
RelatedItem (type = host)
TitleInfo
Title
Rutgers University Electronic Theses and Dissertations
Identifier (type = RULIB)
ETD
Identifier
ETD_8413
PhysicalDescription
Form (authority = gmd)
electronic resource
InternetMediaType
application/pdf
InternetMediaType
text/xml
Extent
1 online resource (xi, 85 p. : ill.)
Note (type = degree)
Ph.D.
Note (type = bibliography)
Includes bibliographical references
Subject (authority = ETD-LCSH)
Topic
Vapor-plating
Note (type = statement of responsibility)
by Sun Wong
RelatedItem (type = host)
TitleInfo
Title
School of Graduate Studies Electronic Theses and Dissertations
Identifier (type = local)
rucore10001600001
Location
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NjNbRU
Identifier (type = doi)
doi:10.7282/T38W3HG5
Genre (authority = ExL-Esploro)
ETD doctoral
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Rights

RightsDeclaration (ID = rulibRdec0006)
The author owns the copyright to this work.
RightsHolder (type = personal)
Name
FamilyName
Wong
GivenName
Sun
Role
Copyright Holder
RightsEvent
Type
Permission or license
DateTime (encoding = w3cdtf); (qualifier = exact); (point = start)
2017-09-28 12:16:50
AssociatedEntity
Name
Sun Wong
Role
Copyright holder
Affiliation
Rutgers University. School of Graduate Studies
AssociatedObject
Type
License
Name
Author Agreement License
Detail
I hereby grant to the Rutgers University Libraries and to my school the non-exclusive right to archive, reproduce and distribute my thesis or dissertation, in whole or in part, and/or my abstract, in whole or in part, in and from an electronic format, subject to the release date subsequently stipulated in this submittal form and approved by my school. I represent and stipulate that the thesis or dissertation and its abstract are my original work, that they do not infringe or violate any rights of others, and that I make these grants as the sole owner of the rights to my thesis or dissertation and its abstract. I represent that I have obtained written permissions, when necessary, from the owner(s) of each third party copyrighted matter to be included in my thesis or dissertation and will supply copies of such upon request by my school. I acknowledge that RU ETD and my school will not distribute my thesis or dissertation or its abstract if, in their reasonable judgment, they believe all such rights have not been secured. I acknowledge that I retain ownership rights to the copyright of my work. I also retain the right to use all or part of this thesis or dissertation in future works, such as articles or books.
Copyright
Status
Copyright protected
Availability
Status
Open
Reason
Permission or license
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Technical

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ETD
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windows xp
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DateCreated (point = end); (encoding = w3cdtf); (qualifier = exact)
2017-10-01T20:39:20
DateCreated (point = end); (encoding = w3cdtf); (qualifier = exact)
2017-10-01T20:39:20
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