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Photoemission studies of biased graphene-insulator-semiconductor structures
Descriptive
TitleInfo
Title
Photoemission studies of biased graphene-insulator-semiconductor structures
Name
(type = personal)
NamePart
(type = family)
Kalyanikar
NamePart
(type = given)
Malathi S.
NamePart
(type = date)
1989-
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Malathi S. Kalyanikar
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(authority = RULIB)
author
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Garfunkel
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Eric
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Eric Garfunkel
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Advisory Committee
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chair
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Rangan
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Sylvie
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Sylvie Rangan
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Advisory Committee
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co-chair
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Hinch
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Jane
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Jane Hinch
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Advisory Committee
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internal member
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Castner
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Edward
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Edward Castner
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Advisory Committee
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internal member
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Castner
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(type = given)
Edward W
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Edward W Castner
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Advisory Committee
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(authority = RULIB)
internal member
Name
(type = personal)
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(type = family)
Hinch
NamePart
(type = given)
Jane
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Jane Hinch
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Advisory Committee
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(authority = RULIB)
internal member
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(type = family)
Andrei
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(type = given)
Eva Y
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Eva Y Andrei
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Advisory Committee
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outside member
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Rutgers University
Role
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(authority = RULIB)
degree grantor
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School of Graduate Studies
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Text
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theses
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2018
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2018-01
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2018
Place
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xx
Language
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eng
Abstract
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Electrostatic potential changes across ultrathin film heterostructures are critical for the functioning of a large class of devices. In this research work, a general approach to the direct measurement of nanoscale internal fields has been developed. Small spot X-ray photoemission is performed on a biased graphene (Gr)/dielectric/Si structure in order to experimentally determine the potential profile across the system, including discontinuities at the interfaces. The energy of the core-levels of the different elements from the stack provide a measure of the local potential and are used to reconstruct the potential profile as a function of depth in the first 10nm of the stack. It is found that each interface plays a critical role in establishing the potential across the dielectric, and the origin of the potential discontinuities at each interface can be determined, in addition to the potential drop across each layer. This unique experimental approach offers understanding of device function and leads to new possibilities for addressing problems that have until now prevented further scaling of devices and 2D material integration. Silicon oxide (SiO2), a well understood dielectric, is used as a proof of concept material in this structure to determine the potential profile using a refined biased-XPS method. A simple linear potential profile across the oxide along with offsets at each interface is able to describe the experimental data. The offset at the SiO2-Si interface results from band bending developed in the Si substrate under the different biasing conditions. Whereas, the Gr-SiO2 interface potential offset, in the studied bias range, is proposed to arise from trapped polar species at the interface. Finally a more complex Gr/HfO2/SiO2/Si heterostructure has also been studied under bias. Here, potential offsets at the Gr/HfO2 and SiO2/Si were measured as in the simple Gr/SiO2/Si case, but with an additional variable offset at the HfO2-SiO2 interface. Possible origins for this potential offset that varied in intensity and direction with applied bias are proposed.
Subject
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Topic
Chemistry and Chemical Biology
Subject
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Topic
Graphene
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Rutgers University Electronic Theses and Dissertations
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ETD_8677
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electronic resource
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application/pdf
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Extent
1 online resource (xiii, 162 p. : ill.)
Note
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Ph.D.
Note
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Includes bibliographical references
Note
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by Malathi S. Kalyanikar
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School of Graduate Studies Electronic Theses and Dissertations
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rucore10001600001
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NjNbRU
Identifier
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doi:10.7282/T3VT1W99
Genre
(authority = ExL-Esploro)
ETD doctoral
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Rights
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The author owns the copyright to this work.
RightsHolder
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Name
FamilyName
Kalyanikar
GivenName
Malathi
MiddleName
S.
Role
Copyright Holder
RightsEvent
Type
Permission or license
DateTime
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2018-01-12 16:17:22
AssociatedEntity
Name
Malathi Kalyanikar
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Affiliation
Rutgers University. School of Graduate Studies
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Author Agreement License
Detail
I hereby grant to the Rutgers University Libraries and to my school the non-exclusive right to archive, reproduce and distribute my thesis or dissertation, in whole or in part, and/or my abstract, in whole or in part, in and from an electronic format, subject to the release date subsequently stipulated in this submittal form and approved by my school. I represent and stipulate that the thesis or dissertation and its abstract are my original work, that they do not infringe or violate any rights of others, and that I make these grants as the sole owner of the rights to my thesis or dissertation and its abstract. I represent that I have obtained written permissions, when necessary, from the owner(s) of each third party copyrighted matter to be included in my thesis or dissertation and will supply copies of such upon request by my school. I acknowledge that RU ETD and my school will not distribute my thesis or dissertation or its abstract if, in their reasonable judgment, they believe all such rights have not been secured. I acknowledge that I retain ownership rights to the copyright of my work. I also retain the right to use all or part of this thesis or dissertation in future works, such as articles or books.
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2018-01-31
DateTime
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2020-01-31
Type
Embargo
Detail
Access to this PDF has been restricted at the author's request. It will be publicly available after January 31st, 2020.
Copyright
Status
Copyright protected
Availability
Status
Open
Reason
Permission or license
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windows xp
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2018-01-12T17:25:28
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2018-01-12T17:25:28
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