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Thin film study of topological materials via atomic scale engineering

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TitleInfo
Title
Thin film study of topological materials via atomic scale engineering
Name (type = personal)
NamePart (type = family)
Moon
NamePart (type = given)
Jisoo
NamePart (type = date)
1983-
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Jisoo Moon
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RoleTerm (authority = RULIB)
author
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NamePart (type = family)
Oh
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Seongshik
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Seongshik Oh
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Advisory Committee
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chair
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Coleman
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Piers
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Piers Coleman
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Advisory Committee
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internal member
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Croft
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Mark
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Mark Croft
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Advisory Committee
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internal member
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NamePart (type = family)
Gawiser
NamePart (type = given)
Eric
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Eric Gawiser
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Advisory Committee
Role
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internal member
Name (type = personal)
NamePart (type = family)
Greenblatt
NamePart (type = given)
Martha
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Martha Greenblatt
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Advisory Committee
Role
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outside member
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Rutgers University
Role
RoleTerm (authority = RULIB)
degree grantor
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School of Graduate Studies
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school
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Text
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theses
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2019
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2019-05
Language
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English
Abstract (type = abstract)
This dissertation seeks to deepen our understanding of the novel physical properties in a class of topological materials named topological insulators (TIs). In particular, electrical transport properties in Bi2Se3 TI thin films grown by the molecular beam epitaxy (MBE) technique are mainly investigated through an experimental standpoint. It first begins by reviewing the topological phases from the quantum Hall effect (QHE) to the TIs in a conceptual point of view, which will lead to what the TIs are. This is followed by a comprehensive introduction to the thin film growth using the MBE as atomically precise technique in consideration of atomic scale engineering for various defects. This is then follow by an approach to discern unknown physical properties via electrical transport measurements, which is the main experimental technique used in this work. Throughout the following chapters these techniques are applied to manipulate the topological properties of the TIs and explained in details.
For the experimental results, we first discuss the hole doping problem in Bi2Se3 thin films and its solution. This study shows that the main culprit resides in the high density of interfacial defects on the substrates, and how a solution is achieved by a properly designed buffer layer engineering. Subsequently, we show the method of implementing the ferromagnetic (FM) anomalous Hall effect (AHE) to the Bi2Se3 thin films. While the Cr-doped Bi2Se3, among the three dimensional TI families, was predicted to be the most promising candidate to exhibit the quantum anomalous Hall effect (QAHE), the observation was quite the contrary. It has failed to exhibit even the FM AHE, which is an expected predecessor to the QAHE in comparison to the Cr- or V-doped (Sb,Bi)2Te3 showing the quantum anomalous Hall effect (QAHE) and V-doped Bi2Se3 exhibiting the AHE. In great succession via utilizing a surface state engineering scheme, we show the achievement of the FM AHE in Cr-doped Bi2Se3 thin films, and consequently emerging positive anomalous Hall conductivity. We explain the sign problem by analyzing the mass-gap susceptibility based on a tight binding model and first-principles study.
Subject (authority = RUETD)
Topic
Physics and Astronomy
Subject (authority = LCSH)
Topic
Topological insulators -- Electric properties
RelatedItem (type = host)
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Title
Rutgers University Electronic Theses and Dissertations
Identifier (type = RULIB)
ETD
Identifier
ETD_9762
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application/pdf
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text/xml
Extent
1 online resource (xxi, 143 pages) : illustrations
Note (type = degree)
Ph.D.
Note (type = bibliography)
Includes bibliographical references
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Title
School of Graduate Studies Electronic Theses and Dissertations
Identifier (type = local)
rucore10001600001
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NjNbRU
Identifier (type = doi)
doi:10.7282/t3-bgc2-j218
Genre (authority = ExL-Esploro)
ETD doctoral
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The author owns the copyright to this work.
RightsHolder (type = personal)
Name
FamilyName
Moon
GivenName
Jisoo
Role
Copyright Holder
RightsEvent
Type
Permission or license
DateTime (encoding = w3cdtf); (qualifier = exact); (point = start)
2019-04-10 17:43:27
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Name
Jisoo Moon
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Affiliation
Rutgers University. School of Graduate Studies
AssociatedObject
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Author Agreement License
Detail
I hereby grant to the Rutgers University Libraries and to my school the non-exclusive right to archive, reproduce and distribute my thesis or dissertation, in whole or in part, and/or my abstract, in whole or in part, in and from an electronic format, subject to the release date subsequently stipulated in this submittal form and approved by my school. I represent and stipulate that the thesis or dissertation and its abstract are my original work, that they do not infringe or violate any rights of others, and that I make these grants as the sole owner of the rights to my thesis or dissertation and its abstract. I represent that I have obtained written permissions, when necessary, from the owner(s) of each third party copyrighted matter to be included in my thesis or dissertation and will supply copies of such upon request by my school. I acknowledge that RU ETD and my school will not distribute my thesis or dissertation or its abstract if, in their reasonable judgment, they believe all such rights have not been secured. I acknowledge that I retain ownership rights to the copyright of my work. I also retain the right to use all or part of this thesis or dissertation in future works, such as articles or books.
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Type
Embargo
DateTime (encoding = w3cdtf); (qualifier = exact); (point = start)
2019-05-31
DateTime (encoding = w3cdtf); (qualifier = exact); (point = end)
2019-11-30
Detail
Access to this PDF has been restricted at the author's request. It will be publicly available after November 30th, 2019.
Copyright
Status
Copyright protected
Availability
Status
Open
Reason
Permission or license
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2019-04-12T13:53:04
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