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Enhancement of hot spot cooling by capped diamond layer deposition for multifinger AlGaN/GaN HEMTs

Descriptive

TypeOfResource
Text
TitleInfo
Title
Enhancement of hot spot cooling by capped diamond layer deposition for multifinger AlGaN/GaN HEMTs
Name (type = personal)
NamePart (type = family)
Zhang
NamePart (type = given)
Hang
Affiliation
Mechanical and Aerospace Engineering, Rutgers University
Role
RoleTerm (authority = marcrt); (type = text)
author
Name (authority = orcid); (authorityURI = http://id.loc.gov/vocabulary/identifiers/orcid.html); (type = personal); (valueURI = http://orcid.org/0000-0003-0481-2738)
NamePart (type = family)
Guo
NamePart (type = given)
Zhixiong
Role
RoleTerm (authority = marcrt); (type = text)
author
Affiliation
Mechanical and Aerospace Engineering, Rutgers University
Name (type = personal)
NamePart (type = family)
Lu
NamePart (type = given)
Yongfeng
Affiliation
University of Nebraska, Lincoln
Role
RoleTerm (authority = marcrt); (type = text)
author
Name (authority = RutgersOrg-Department); (type = corporate)
NamePart
Mechanical and Aerospace Engineering
Genre (authority = RULIB-FS)
Article, Refereed
Genre (authority = NISO JAV)
Accepted Manuscript (AM)
Note (type = peerReview)
Peer reviewed
OriginInfo
DateCreated (encoding = w3cdtf); (keyDate = yes); (qualifier = exact)
2020
Abstract (type = Abstract)
The impact of a capped diamond layer for enhanced cooling of multi-finger AlGaN/GaN high-electron-mobility-transistors (HEMTs) has been investigated under steady-state operating condition. By depositing a capped diamond thin film onto the HEMTs, the temperature distribution around the hot spots tends to be more uniform and the junction temperature can be suppressed significantly. The capped diamond serves as a highly effective heat spreader and its thermal spreading ability depends on the structural design patterns and working conditions. Some key parameters affecting the thermal performance of the capped diamond have been examined, including the heat dissipation power density, gate pitch distance, embedding depth of the heat source, thermal boundary resistance, substrate material as well as the cap thickness. For the twelve-finger model with 20 µm gate pitch distance and gate power density 6 W/mm, a 20 µm layer of capped diamond could reduce the junction temperature by 12.1% for GaN-on-Diamond HEMTs and by 25.3% for GaN-on- SiC HEMTs, respectively. Even with a 1 µm capped diamond layer, the reduction would be 7.6% and 9.9%, respectively. The temperature reduction for GaN-on-Si is more significant.
Language
LanguageTerm (authority = ISO 639-3:2007); (type = text)
English
PhysicalDescription
InternetMediaType
application/pdf
Extent
1 online resource (6 pages) : illustrations
Subject (authority = local)
Topic
High-electron mobility transistors
Subject (authority = local)
Topic
HEMT
Subject (authority = local)
Topic
Heat spreader
Subject (authority = local)
Topic
Capped diamond
Subject (authority = local)
Topic
Electronics cooling
Extension
DescriptiveEvent
Type
Citation
DateTime (encoding = w3cdtf)
2020
AssociatedObject
Name
IEEE Transactions on Electron Devices
Type
Journal
Relationship
Has part
Detail
47-52
Identifier (type = volume and issue)
67(1)
Reference (type = url)
http://dx.doi.org/10.1109/TED.2019.2951190
RelatedItem (type = host)
TitleInfo
Title
Guo, Zhixiong
Identifier (type = local)
rucore30217200001
Location
PhysicalLocation (authority = marcorg); (displayLabel = Rutgers, The State University of New Jersey)
NjNbRU
Identifier (type = doi)
doi:10.7282/t3-brfz-p295
Genre (authority = ExL-Esploro)
Accepted Manuscript
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RightsDeclaration (AUTHORITY = FS); (TYPE = [FS] statement #1); (ID = rulibRdec0004)
Copyright for scholarly resources published in RUcore is retained by the copyright holder. By virtue of its appearance in this open access medium, you are free to use this resource, with proper attribution, in educational and other non-commercial settings. Other uses, such as reproduction or republication, may require the permission of the copyright holder.
Copyright
Status
Copyright protected
Availability
Status
Open
Reason
Permission or license
RightsEvent
Type
Permission or license
AssociatedObject
Type
License
Name
Multiple author license v. 1
Detail
I hereby grant to Rutgers, The State University of New Jersey (Rutgers) the non-exclusive right to retain, reproduce, and distribute the deposited work (Work) in whole or in part, in and from its electronic format, without fee. This agreement does not represent a transfer of copyright to Rutgers.Rutgers may make and keep more than one copy of the Work for purposes of security, backup, preservation, and access and may migrate the Work to any medium or format for the purpose of preservation and access in the future. Rutgers will not make any alteration, other than as allowed by this agreement, to the Work.I represent and warrant to Rutgers that the Work is my original work. I also represent that the Work does not, to the best of my knowledge, infringe or violate any rights of others.I further represent and warrant that I have obtained all necessary rights to permit Rutgers to reproduce and distribute the Work and that any third-party owned content is clearly identified and acknowledged within the Work.By granting this license, I acknowledge that I have read and agreed to the terms of this agreement and all related RUcore and Rutgers policies.
RightsEvent
Type
Embargo
DateTime (point = start); (encoding = w3cdtf); (qualifier = exact)
2020-01-16
DateTime (point = end); (encoding = w3cdtf); (qualifier = exact)
2022-01-16
Detail
Access to this PDF has been restricted at the publisher's request. It will be publicly available after January 16, 2022.
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Technical

RULTechMD (ID = TECHNICAL1)
ContentModel
Document
CreatingApplication
Version
1.4
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Mac OS X 10.13.6 Quartz PDFContext
DateCreated (point = end); (encoding = w3cdtf); (qualifier = exact)
2019-11-14T20:45:15
DateCreated (point = end); (encoding = w3cdtf); (qualifier = exact)
2019-11-14T20:45:15
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