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Experimental study of interfaces in Van Der Waals heterostructures
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Altvater, Michael. Experimental study of interfaces in Van Der Waals heterostructures. Retrieved from https://doi.org/doi:10.7282/t3-fce9-es82

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TitleExperimental study of interfaces in Van Der Waals heterostructures
NameAltvater, Michael (author); Andrei, Eva Y (chair); Chakhalian, Jak (internal member); Lee, Sang-Hyuk (internal member); Andrei, Natan (internal member); Luican-Mayer, Adina (outside member); Rutgers University; School of Graduate Studies
Date Created2020
Other Date2020-10 (degree)
SubjectPhysics and Astronomy
Extent1 online resource (xi, 192 pages)
DescriptionThe advent of 2D materials and heterostructrures built from them has unleashed a huge potential to create and control novel electron systems. This thesis experimentally explores physical effects on the electronic states at the interfaces of 2D materials using electrostatic atomic force microscopy (AFM) and scanning tunneling microscopy (STM). The findings described herein include the observation of atomically thin graphene and its local charge distributions through an insulating encapsulant using electrostatic force microscopy (EFM) and Kelvin probe force microscopy (KPFM). Similar to encapsulation with hexagonal boron nitride (hBN), it is shown that covering a 2D material surface using monolayer graphene protects from damaging interactions with the environment, preventing detrimental oxidation of the sample surface in ambient conditions, with the added benefit of being able to image local charge distributions at atomic scales through the cover layer. Using this method, we image the room temperature charge density wave (CDW) phase of 1T-TaS2, a highly correlated 2D material, and identify the ordering of topological defects of the 2D CDW state to be related to that of Abrikosov vortex lattices in type II superconductor films. The interaction between the graphene layer and the 1T-TaS2 surface is further probed at 77K where 1T-TaS2 exhibits a commensurate CDW coupled to a Mott insulating electronic phase. Itinerant carriers within the graphene layer are found to screen the electron-electron interactions and reduce the Mott gap size at the 1T-TaS2 surface. Simultaneously, a charge density wave is observed to be induced in the graphene layer that is analogous to the superconducting proximity effect. The novel CDW proximity effect is found to be well captured within density functional theory (DFT) as well as with a simplified mean field Hamiltonian which allows the effect to be generalized to other materials.
NotePh.D.
NoteIncludes bibliographical references
Genretheses, ETD doctoral
Persistent URLhttps://doi.org/doi:10.7282/t3-fce9-es82
LanguageEnglish
CollectionSchool of Graduate Studies Electronic Theses and Dissertations
Organization NameRutgers, The State University of New Jersey
RightsThe author owns the copyright to this work.
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