TY - JOUR TI - A computational study of laser etching parameters on silicon plate DO - https://doi.org/doi:10.7282/t3-akp4-v286 PY - 2021 AB - In this research work, the effect of laser etching parameters are studied for the computational analysis of silicon plate. The silicon plate model was generated and thermal transient analysis was simulated in ANSYS Workbench. The model was studied as a function of laser etching parameters such as laser intensity, cutting speed, spot size. For the simulation, operating parameters were moving heat flux, thermal convection, radiation and material properties with temperature-dependent thermal conductivity, latent heat of fusion and vaporisation. Material surface and the cross-section was observed for the temperature distribution profile of the material at the same location. For simulation, 3D Flat plat model of 20 x 20mm with a thickness of 1mm were generated. The model was simulated for, laser intensity of 2000, 3800 and 10000 W/mm2. Also, for scanning speed of 50, 200, 500 mm/s. And, for the spot size of 0.05, 0.08 and 0.15mm radius. Other parameters were kept constant for each case. 2-D plots were generated to analyse the results of laser etching parameters on the temperature distribution. Images are displayed with temperature distribution across the plate thickness and surface of the plate. The results demonstrate that laser etching parameters had an influence on the temperature distribution. In this way, laser etching parameters can be investigated for industrial use. KW - Laser KW - Mechanical and Aerospace Engineering LA - English ER -