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4H-silicon carbide MOSFET interface structure, defect states and inversion layer mobility

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TitleInfo
Title
4H-silicon carbide MOSFET interface structure, defect states and inversion layer mobility
Name (type = personal)
NamePart (type = family)
Liu
NamePart (type = given)
Gang
NamePart (type = date)
1982-
DisplayForm
Gang Liu
Role
RoleTerm (authority = RULIB)
author
Name (type = personal)
NamePart (type = family)
Feldman
NamePart (type = given)
Leonard C.
DisplayForm
Leonard C. Feldman
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
chair
Name (type = personal)
NamePart (type = family)
Lu
NamePart (type = given)
Yicheng
DisplayForm
Yicheng Lu
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
internal member
Name (type = personal)
NamePart (type = family)
Jeon
NamePart (type = given)
Jaeseok
DisplayForm
Jaeseok Jeon
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
internal member
Name (type = personal)
NamePart (type = family)
Garfunkel
NamePart (type = given)
Eric L.
DisplayForm
Eric L. Garfunkel
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
outside member
Name (type = corporate)
NamePart
Rutgers University
Role
RoleTerm (authority = RULIB)
degree grantor
Name (type = corporate)
NamePart
Graduate School - New Brunswick
Role
RoleTerm (authority = RULIB)
school
TypeOfResource
Text
Genre (authority = marcgt)
theses
OriginInfo
DateCreated (qualifier = exact)
2014
DateOther (qualifier = exact); (type = degree)
2014-01
Place
PlaceTerm (type = code)
xx
Language
LanguageTerm (authority = ISO639-2b); (type = code)
eng
Abstract (type = abstract)
Silicon carbide is the only wide band gap semiconductor that has a native oxide, and a leading candidate for development of next-generation, energy efficient, high power metal-oxide-semiconductor field effect transistors (MOSFETs). Progress in this technology has been limited by the semiconductor-dielectric interface structure and its effect on the inversion layer mobility. The major objective of this dissertation is to study and improve 4H-SiC MOSFET interface structure, defect states and inversion layer mobility on the (11-20) crystal face of SiC (a-face), employing nitrogen and phosphorous passivation. We also use these results to explore the effect of reactive ion etching on the a-face, an important aspect of processing optimum power devices. We correlate electrical measurements, i.e. current-voltage (I-V) and capacitance-voltage (C-V) with physical characterization including X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS) and medium energy ion scattering (MEIS). A significant phosphorus induced inversion layer mobility enhancement of ~125 cm2/V-s is achieved, and the revisited effect of NO on the a-face of 4H-SiC yields an impressive mobility of ~85 cm2/V-s. These results indicate that N and P improves the interface both by passivation and by interfacial counter doping, with the latter mechanism more effective on the a-face than the Si-face. Interface trap density (Nit) and the mobility-temperature dependence both indicate coulomb scattering is no longer the limiting factor for the N and P annealed a-face inversion layer mobility. The second major part of this dissertation reports the use of hydrogen annealing to implement the successful recovery of the a-face (11-20) crystal structure and the inversion layer mobility following degradation by reactive ion etching (RIE). The results impact the processing of SiC trench MOSFETs where the a-face sidewall forms a significant portion of the conducting semiconductor channel.
Subject (authority = RUETD)
Topic
Electrical and Computer Engineering
RelatedItem (type = host)
TitleInfo
Title
Rutgers University Electronic Theses and Dissertations
Identifier (type = RULIB)
ETD
Identifier
ETD_5254
PhysicalDescription
Form (authority = gmd)
electronic resource
InternetMediaType
application/pdf
InternetMediaType
text/xml
Extent
xvi, 100 p. : ill.
Note (type = degree)
Ph.D.
Note (type = bibliography)
Includes bibliographical references
Note (type = statement of responsibility)
by Gang Liu
Subject (authority = ETD-LCSH)
Topic
Metal oxide semiconductor field-effect transistors
Subject (authority = ETD-LCSH)
Topic
Power electronics
Subject (authority = ETD-LCSH)
Topic
Silicon carbide
RelatedItem (type = host)
TitleInfo
Title
Graduate School - New Brunswick Electronic Theses and Dissertations
Identifier (type = local)
rucore19991600001
Location
PhysicalLocation (authority = marcorg); (displayLabel = Rutgers, The State University of New Jersey)
NjNbRU
Identifier (type = doi)
doi:10.7282/T3FF3QGQ
Genre (authority = ExL-Esploro)
ETD doctoral
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Rights

RightsDeclaration (ID = rulibRdec0006)
The author owns the copyright to this work.
RightsHolder (type = personal)
Name
FamilyName
Liu
GivenName
Gang
Role
Copyright Holder
RightsEvent
Type
Permission or license
DateTime (encoding = w3cdtf); (qualifier = exact); (point = start)
2013-12-26 16:31:53
AssociatedEntity
Name
Gang Liu
Role
Copyright holder
Affiliation
Rutgers University. Graduate School - New Brunswick
AssociatedObject
Type
License
Name
Author Agreement License
Detail
I hereby grant to the Rutgers University Libraries and to my school the non-exclusive right to archive, reproduce and distribute my thesis or dissertation, in whole or in part, and/or my abstract, in whole or in part, in and from an electronic format, subject to the release date subsequently stipulated in this submittal form and approved by my school. I represent and stipulate that the thesis or dissertation and its abstract are my original work, that they do not infringe or violate any rights of others, and that I make these grants as the sole owner of the rights to my thesis or dissertation and its abstract. I represent that I have obtained written permissions, when necessary, from the owner(s) of each third party copyrighted matter to be included in my thesis or dissertation and will supply copies of such upon request by my school. I acknowledge that RU ETD and my school will not distribute my thesis or dissertation or its abstract if, in their reasonable judgment, they believe all such rights have not been secured. I acknowledge that I retain ownership rights to the copyright of my work. I also retain the right to use all or part of this thesis or dissertation in future works, such as articles or books.
RightsEvent
DateTime (encoding = w3cdtf); (qualifier = exact); (point = start)
2014-01-31
DateTime (encoding = w3cdtf); (qualifier = exact); (point = end)
2014-08-02
Type
Embargo
Detail
Access to this PDF has been restricted at the author's request. It will be publicly available after August 2nd, 2014.
Copyright
Status
Copyright protected
Availability
Status
Open
Reason
Permission or license
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ETD
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windows xp
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