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Simulation and optimization of the GaN MOCVD process

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TitleInfo
Title
Simulation and optimization of the GaN MOCVD process
Name (type = personal)
NamePart (type = family)
Meng
NamePart (type = given)
Jiandong
NamePart (type = date)
1983-
DisplayForm
Jiandong Meng
Role
RoleTerm (authority = RULIB)
author
Name (type = personal)
NamePart (type = family)
Jaluria
NamePart (type = given)
Yogesh
DisplayForm
Yogesh Jaluria
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
chair
Name (type = personal)
NamePart (type = family)
Lin
NamePart (type = given)
Hao
DisplayForm
Hao Lin
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
internal member
Name (type = personal)
NamePart (type = family)
Tse
NamePart (type = given)
Stephen D.
DisplayForm
Stephen D. Tse
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
internal member
Name (type = personal)
NamePart (type = family)
Ierapetritou
NamePart (type = given)
Marianthi G.
DisplayForm
Marianthi G. Ierapetritou
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
outside member
Name (type = corporate)
NamePart
Rutgers University
Role
RoleTerm (authority = RULIB)
degree grantor
Name (type = corporate)
NamePart
Graduate School - New Brunswick
Role
RoleTerm (authority = RULIB)
school
TypeOfResource
Text
Genre (authority = marcgt)
theses
OriginInfo
DateCreated (qualifier = exact)
2014
DateOther (qualifier = exact); (type = degree)
2014-10
CopyrightDate (encoding = w3cdtf)
2014
Place
PlaceTerm (type = code)
xx
Language
LanguageTerm (authority = ISO639-2b); (type = code)
eng
Abstract (type = abstract)
A detailed mathematical model for the growth of gallium nitride (GaN) in metalorganic chemical vapor deposition (MOCVD) process is developed, and the complete chemical mechanism is introduced, which has 17 gas phase and 23 surface species participating in 17 gas phase and 52 surface reactions. Based on an experimental study on the flow and thermal transport processes in the system, and available experimental data in the literature, validation study is conducted to ensure its accuracy. After that, the entire model is applied to perform steady state numerical simulation of the GaN MOCVD process in both 2D impinging reactor and 3D rotating disk reactor. The flow, temperature and concentration profiles are predicted, and the dependence of the growth rate and uniformity of the deposited layers on operating conditions, such as reactor operating pressure, susceptor temperature, inlet velocity, rotational speed, and concentration ratio of the precursors, is investigated to gain greater insight into the reactor performance and characteristics. The transient behavior of the GaN deposition process is numerically investigated. The 2D impinging reactor is considered to examine the time-dependent transport in the MOCVD process, including the steady-state deposition process, and the system start-up and shut-down. The temperature field and the deposition rate are studied as functions of time, as well as the precursor mass fraction at certain times. This work also provides inputs on the effects of changing operating conditions and the duration of starting and shut down effects. Two design variables, inlet velocity and inlet precursor concentration ratio, which have a significant effect on the deposition rate and uniformity of the film are identified. Inlet precursor concentration ratio is defined as the ratio of the volume flow rate of ammonia to the volume flow rate of trimethylgallium. Response surfaces for deposition rate and uniformity as a function of inlet velocity and inlet precursor concentration are developed by Compromise Response Surface Method (CRSM). The response surfaces are used to generate the Pareto frontier for the conflicting objectives of optimal deposition rate and uniformity. The trade-off between deposition rate and uniformity is captured by the Pareto frontier.
Subject (authority = RUETD)
Topic
Mechanical and Aerospace Engineering
Subject (authority = ETD-LCSH)
Topic
Gallium nitride
Subject (authority = ETD-LCSH)
Topic
Metal organic chemical vapor deposition
Subject (authority = ETD-LCSH)
Topic
Mathematical models
RelatedItem (type = host)
TitleInfo
Title
Rutgers University Electronic Theses and Dissertations
Identifier (type = RULIB)
ETD
Identifier
ETD_5690
PhysicalDescription
Form (authority = gmd)
electronic resource
InternetMediaType
application/pdf
InternetMediaType
text/xml
Extent
1 online resource (xiv, 108 p. : ill.)
Note (type = degree)
Ph.D.
Note (type = bibliography)
Includes bibliographical references
Note (type = statement of responsibility)
by Jiandong Meng
RelatedItem (type = host)
TitleInfo
Title
Graduate School - New Brunswick Electronic Theses and Dissertations
Identifier (type = local)
rucore19991600001
Location
PhysicalLocation (authority = marcorg); (displayLabel = Rutgers, The State University of New Jersey)
NjNbRU
Identifier (type = doi)
doi:10.7282/T3RR1WZ6
Genre (authority = ExL-Esploro)
ETD doctoral
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Rights

RightsDeclaration (ID = rulibRdec0006)
The author owns the copyright to this work.
RightsHolder (type = personal)
Name
FamilyName
Meng
GivenName
Jiandong
Role
Copyright Holder
RightsEvent
Type
Permission or license
DateTime (encoding = w3cdtf); (qualifier = exact); (point = start)
2014-05-10 18:28:56
AssociatedEntity
Name
Jiandong Meng
Role
Copyright holder
Affiliation
Rutgers University. Graduate School - New Brunswick
AssociatedObject
Type
License
Name
Author Agreement License
Detail
I hereby grant to the Rutgers University Libraries and to my school the non-exclusive right to archive, reproduce and distribute my thesis or dissertation, in whole or in part, and/or my abstract, in whole or in part, in and from an electronic format, subject to the release date subsequently stipulated in this submittal form and approved by my school. I represent and stipulate that the thesis or dissertation and its abstract are my original work, that they do not infringe or violate any rights of others, and that I make these grants as the sole owner of the rights to my thesis or dissertation and its abstract. I represent that I have obtained written permissions, when necessary, from the owner(s) of each third party copyrighted matter to be included in my thesis or dissertation and will supply copies of such upon request by my school. I acknowledge that RU ETD and my school will not distribute my thesis or dissertation or its abstract if, in their reasonable judgment, they believe all such rights have not been secured. I acknowledge that I retain ownership rights to the copyright of my work. I also retain the right to use all or part of this thesis or dissertation in future works, such as articles or books.
Copyright
Status
Copyright protected
Availability
Status
Open
Reason
Permission or license
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RULTechMD (ID = TECHNICAL1)
ContentModel
ETD
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windows xp
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