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Electronic properties and phase engineering of two dimensional MoS2

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TitleInfo
Title
Electronic properties and phase engineering of two dimensional MoS2
Name (type = personal)
NamePart (type = family)
Kappera
NamePart (type = given)
Rajesh
NamePart (type = date)
1984-
DisplayForm
Rajesh Kappera
Role
RoleTerm (authority = RULIB)
author
Name (type = personal)
NamePart (type = family)
Chhowalla
NamePart (type = given)
Manish
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Manish Chhowalla
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
chair
Name (type = personal)
NamePart (type = family)
Lu
NamePart (type = given)
Yicheng
DisplayForm
Yicheng Lu
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
internal member
Name (type = personal)
NamePart (type = family)
Caggiano
NamePart (type = given)
Michael
DisplayForm
Michael Caggiano
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
internal member
Name (type = personal)
NamePart (type = family)
Mohite
NamePart (type = given)
Aditya
DisplayForm
Aditya Mohite
Affiliation
Advisory Committee
Role
RoleTerm (authority = RULIB)
outside member
Name (type = corporate)
NamePart
Rutgers University
Role
RoleTerm (authority = RULIB)
degree grantor
Name (type = corporate)
NamePart
Graduate School - New Brunswick
Role
RoleTerm (authority = RULIB)
school
TypeOfResource
Text
Genre (authority = marcgt)
theses
OriginInfo
DateCreated (encoding = w3cdtf); (qualifier = exact)
2015
DateOther (qualifier = exact); (type = degree)
2015-01
CopyrightDate (encoding = w3cdtf); (qualifier = exact)
2015
Place
PlaceTerm (type = code)
xx
Language
LanguageTerm (authority = ISO639-2b); (type = code)
eng
Abstract (type = abstract)
There has been an increased interest in the research of 2D layered materials since the past few years especially after the discovery and physics related study of Graphene, a monolayer of graphite. Layered materials beyond graphene are the family of transition metal dichalcogenides (TMDs) which consist of over 40 members ranging from semiconductors to insulators to metals. All these materials are shown to be easily exfoliated to form monolayers which exhibit a new set of properties owing to the quantum confinement effects that occur during their exfoliation. The intrinsic thickness of less than 1nm per layer, lack of dangling bonds, controllable bandgap and precise control of thickness has aroused the interest of electrical engineers all over the world to use these materials for future electronics and make the dream of all 2D electronics to become true. Field effect transistors made from TMD semiconductors (MoS2, WS2, MoSe2, WSe2 etc.) are exhibiting excellent characteristics namely ON/OFF ratios in the range of 108, saturation currents exceeding 200 μA/μm, mobilities exceeding 100 cm2/Vs and subthreshold swings almost approaching the theoretical limit of 60 mV/dec. Though these values are impressive, they are far below their theoretical expectations, mainly due to the high contact resistance between the metal and semiconductor because of which their excellent intrinsic characteristics are not practically realized. There have been many efforts in mitigating this high contact resistance such as use of different contact metals, chemical doping of contact regions and long thermal annealing of devices which resulted in partial success. The aim of this work would be in establishing a universal strategy in reducing this high contact resistance to provide an ohmic-like contact between the metal and the TMD semiconductor by employing their phase-engineered metallic counterparts as the contacts. By fabricating transistors in which the electrode material and the channel similar is of the same material composition, many factors, which are detrimental to the operation of high performance transistors, can be eliminated. We have gained expertise in phase transformation of these transition metal dichalcogenides and successful utilized them as the contacts by locally patterning different phases on a single monolayer flake. We obtained record saturation currents, transconductances, mobilities and sub-threshold slopes for our novel transistors. This thesis will include details of synthesis of these TMD semiconductors, phase transformation and fabrication of transistors with lowered contact resistance with main emphasis on Molybdenum disulfide (MoS2).
Subject (authority = RUETD)
Topic
Electrical and Computer Engineering
RelatedItem (type = host)
TitleInfo
Title
Rutgers University Electronic Theses and Dissertations
Identifier (type = RULIB)
ETD
Identifier
ETD_6113
PhysicalDescription
Form (authority = gmd)
electronic resource
InternetMediaType
application/pdf
InternetMediaType
text/xml
Extent
1 online resource (xiv, 117 p. : ill.)
Note (type = degree)
Ph.D.
Note (type = bibliography)
Includes bibliographical references
Subject (authority = ETD-LCSH)
Topic
Semiconductors
Subject (authority = ETD-LCSH)
Topic
Molybdenum disulfide
Subject (authority = ETD-LCSH)
Topic
Transistors
Note (type = statement of responsibility)
by Rajesh Kappera
RelatedItem (type = host)
TitleInfo
Title
Graduate School - New Brunswick Electronic Theses and Dissertations
Identifier (type = local)
rucore19991600001
Location
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NjNbRU
Identifier (type = doi)
doi:10.7282/T39025HF
Genre (authority = ExL-Esploro)
ETD doctoral
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Rights

RightsDeclaration (ID = rulibRdec0006)
The author owns the copyright to this work.
RightsHolder (type = personal)
Name
FamilyName
Kappera
GivenName
Rajesh
Role
Copyright Holder
RightsEvent
Type
Permission or license
DateTime (encoding = w3cdtf); (qualifier = exact); (point = start)
2014-12-23 18:36:56
AssociatedEntity
Name
Rajesh Kappera
Role
Copyright holder
Affiliation
Rutgers University. Graduate School - New Brunswick
AssociatedObject
Type
License
Name
Author Agreement License
Detail
I hereby grant to the Rutgers University Libraries and to my school the non-exclusive right to archive, reproduce and distribute my thesis or dissertation, in whole or in part, and/or my abstract, in whole or in part, in and from an electronic format, subject to the release date subsequently stipulated in this submittal form and approved by my school. I represent and stipulate that the thesis or dissertation and its abstract are my original work, that they do not infringe or violate any rights of others, and that I make these grants as the sole owner of the rights to my thesis or dissertation and its abstract. I represent that I have obtained written permissions, when necessary, from the owner(s) of each third party copyrighted matter to be included in my thesis or dissertation and will supply copies of such upon request by my school. I acknowledge that RU ETD and my school will not distribute my thesis or dissertation or its abstract if, in their reasonable judgment, they believe all such rights have not been secured. I acknowledge that I retain ownership rights to the copyright of my work. I also retain the right to use all or part of this thesis or dissertation in future works, such as articles or books.
RightsEvent
DateTime (encoding = w3cdtf); (qualifier = exact); (point = start)
2015-01-31
DateTime (encoding = w3cdtf); (qualifier = exact); (point = end)
2015-08-02
Type
Embargo
Detail
Access to this PDF has been restricted at the author's request. It will be publicly available after August 2nd, 2015.
Copyright
Status
Copyright protected
Availability
Status
Open
Reason
Permission or license
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ETD
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windows xp
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