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Effect of precursor materials on the properties of Si doped boron carbide
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Koelle, Matthew Michael. Effect of precursor materials on the properties of Si doped boron carbide. Retrieved from https://doi.org/doi:10.7282/t3-jrcy-vd12

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TitleEffect of precursor materials on the properties of Si doped boron carbide
NameKoelle, Matthew Michael (author); Haber, Richard (chair); Mann, Adrian (member); Lehman, Richard (member); Rutgers University; School of Graduate Studies
Date Created2022
Other Date2022-05 (degree)
SubjectMaterials Science, Boron carbide, High hardness low density, Silicon doped boron carbide, Silicon hexaboride
Extent47 pages : illustrations
DescriptionBoron carbide is a ceramic notable for its high hardness and low density. Siliconis commonly used to dope boron carbide in order to increase its resistance to failure by amorphization. These doped materials are commonly manufactured with high purity boron and silicon hexaboride as precursor powders, but these materials suffer from high costs and limited supply chains. This research shows that substituting for boron of lower purity or utilizing pure Si powder instead of SiB6 does not have a significant effect on critical properties such as fracture toughness or amorphization resistance. Small increases in hardness were reported for samples fabricated with SiB6 compared to Si, but the differences were not statistically significant. The only measured physical properties showing significant differences were with respect to doping and elastic modulus of the material. Samples prepared with Si instead of SiB6 showed decreased Si doping after hot pressing, however this difference does not exist for samples prepared via spark plasma sintering so altering sintering parameters can alleviate this difference. The Young’s modulus was significantly lower for materials prepared with lower purity boron as well as samples using Si instead of SiB6 as the silicon source. These findings indicate that substitution of precursor materials in Si doped boron carbide is possible with very little change to the properties of the material. This allows for the usage of more economically available and cheaper production pathways for silicon doped boron carbide products.
NoteM.S.
NoteIncludes bibliographical references
Genretheses
Persistent URLhttps://doi.org/doi:10.7282/t3-jrcy-vd12
LanguageEnglish
CollectionSchool of Graduate Studies Electronic Theses and Dissertations
Organization NameRutgers, The State University of New Jersey
RightsThe author owns the copyright to this work.
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