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Electrical characteristics and stability of novel MgxZn1-xO (0 ≤ x ≤ 0.06) thin film transistors
Descriptive
TitleInfo
Title
Electrical characteristics and stability of novel MgxZn1-xO (0 ≤ x ≤ 0.06)
thin film transistors
thin film transistors
Name
(type = personal)
NamePart
(type = family)
Ku
NamePart
(type = given)
Chieh-Jen
NamePart
(type = date)
1979-
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CHIEH-JEN KU
Role
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(authority = RULIB)
author
Name
(type = personal)
NamePart
(type = family)
Lu
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(type = given)
Yicheng
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Yicheng Lu
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Advisory Committee
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(authority = RULIB)
chair
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Lai
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(type = given)
Warren
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Warren Lai
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Advisory Committee
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internal member
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(type = personal)
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(type = family)
Jiang
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(type = given)
Wei
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Wei Jiang
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Advisory Committee
Role
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(authority = RULIB)
internal member
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(type = personal)
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(type = family)
Jeon
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(type = given)
Jaeseok
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Jaeseok Jeon
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Advisory Committee
Role
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(authority = RULIB)
internal member
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(type = personal)
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(type = family)
Birnie
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(type = given)
Bundar P
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Bundar P Birnie
Affiliation
Advisory Committee
Role
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(authority = RULIB)
outside member
Name
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NamePart
Rutgers University
Role
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(authority = RULIB)
degree grantor
Name
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NamePart
Graduate School - New Brunswick
Role
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school
TypeOfResource
Text
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theses
OriginInfo
DateCreated
(qualifier = exact)
2013
DateOther
(qualifier = exact);
(type = degree)
2013-05
Place
PlaceTerm
(type = code)
xx
Language
LanguageTerm
(authority = ISO639-2b);
(type = code)
eng
Abstract
(type = abstract)
Thin Film Transistor (TFT) is emerging for large area electronics and systems. TFT applications include displays, photovoltaics, sensors, smart labels, lighting, integrated logic devices, and embedded power sources. However, the conventional amorphous silicon (a-Si) TFTs, which have dominated display technologies as switch devices in control circuitry, are facing severe challenges due to its low electron mobility (≦1 cm2/V-s) and opacity. The advanced display systems demand the new TFT technology with low power consumption, high resolution, large area, and fast refresh rate. There has been increasing interest in the use of oxide-based TFTs as electronic back-plane switching devices for the next generation of large area flat-panel display applications. Zinc oxide (ZnO) has been receiving considerable attention as a promising oxide semiconductor for TFT technology for the future displays due to its higher electron mobility (~10-50 cm2/V-s), transparency in visible light region, and superior radiation hardness over the a-Si TFTs. To implement ZnO TFTs into novel display systems, stability of ZnO TFTs is the most critical issue and has to be examined. The aim of this dissertation research is to study and enhance electrical characteristics and stability of ZnO TFTs using the ternary MgxZn1-xO (0 ≤ x ≤ 0.06) as the TFT channel layer. The MgxZn1-xO (MZO) is grown by Metal Organic Chemical Vapor Deposition (MOCVD) through in-situ alloying of MgO and ZnO. Mg composition in the MgxZn1-xO is controlled below 6% (x ≤ 0.06) to avoid alloying disorder induced degradation. In the ternary compound MgxZn1-xO, the incorporation of Mg into ZnO along with stronger Mg-O bonding effectively suppresses the oxygen vacancy related defects and improves the electrical characteristics of ZnO-based TFTs. The lower subthreshod slope and higher field effect mobility are obtained in MZO TFTs. In addition, MZO TFTs technology exhibits superior thermal stability. Under a negative bias stress (NBS) testing, MZO TFTs show smaller negative shift of threshold voltages than that of the ZnO counterpart, owing to less ionization and migration of oxygen vacancies. The new MZO TFTs technology presents a great impact on the future classes of low cost and large area electronic applications, such as display systems, sensor arrays, and solar energy conversion.
Subject
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Topic
Electrical and Computer Engineering
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Title
Rutgers University Electronic Theses and Dissertations
Identifier
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Identifier
ETD_4550
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electronic resource
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application/pdf
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Extent
xiv, 118 p. : ill.
Note
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Ph.D.
Note
(type = bibliography)
Includes bibliographical references
Note
(type = statement of responsibility)
by Chieh-Jen Ku
Subject
(authority = ETD-LCSH)
Topic
Thin film transistors
Subject
(authority = ETD-LCSH)
Topic
Zinc oxide thin films
Identifier
(type = hdl)
http://hdl.rutgers.edu/1782.1/rucore10001600001.ETD.000068900
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Graduate School - New Brunswick Electronic Theses and Dissertations
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rucore19991600001
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doi:10.7282/T3S46QH9
Genre
(authority = ExL-Esploro)
ETD doctoral
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Rights
RightsDeclaration
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The author owns the copyright to this work.
RightsHolder
(type = personal)
Name
FamilyName
KU
GivenName
CHIEH-JEN
Role
Copyright Holder
RightsEvent
Type
Permission or license
DateTime
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(qualifier = exact);
(point = start)
2013-03-29 13:23:28
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Name
CHIEH-JEN KU
Role
Copyright holder
Affiliation
Rutgers University. Graduate School - New Brunswick
AssociatedObject
Type
License
Name
Author Agreement License
Detail
I hereby grant to the Rutgers University Libraries and to my school the non-exclusive right to archive, reproduce and distribute my thesis or dissertation, in whole or in part, and/or my abstract, in whole or in part, in and from an electronic format, subject to the release date subsequently stipulated in this submittal form and approved by my school. I represent and stipulate that the thesis or dissertation and its abstract are my original work, that they do not infringe or violate any rights of others, and that I make these grants as the sole owner of the rights to my thesis or dissertation and its abstract. I represent that I have obtained written permissions, when necessary, from the owner(s) of each third party copyrighted matter to be included in my thesis or dissertation and will supply copies of such upon request by my school. I acknowledge that RU ETD and my school will not distribute my thesis or dissertation or its abstract if, in their reasonable judgment, they believe all such rights have not been secured. I acknowledge that I retain ownership rights to the copyright of my work. I also retain the right to use all or part of this thesis or dissertation in future works, such as articles or books.
RightsEvent
DateTime
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(qualifier = exact);
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2013-05-31
DateTime
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2015-05-31
Type
Embargo
Detail
Access to this PDF has been restricted at the author's request. It will be publicly available after May 31st, 2015.
Copyright
Status
Copyright protected
Availability
Status
Open
Reason
Permission or license
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Technical
RULTechMD
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ETD
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(VERSION = 5.1)
windows xp
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