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Single crystalline silicon carbide thin film exfoliation for power device applications
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Amarasinghe, Voshadhi Pansilu. Single crystalline silicon carbide thin film exfoliation for power device applications. Retrieved from https://doi.org/doi:10.7282/T34J0H3D

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TitleSingle crystalline silicon carbide thin film exfoliation for power device applications
NameAmarasinghe, Voshadhi Pansilu (author); Li, Jing (chair); Garfunkel, Eric (internal member); Hall, Gene (internal member); Celler, George K (outside member); Feldman, Leonard C (outside member); Rutgers University; Graduate School - New Brunswick
Date Created2015
Other Date2015-10 (degree)
SubjectChemistry and Chemical Biology, Silicon carbide, Thin films
Extent1 online resource (xiii, 141 p. : ill.)
DescriptionSilicon carbide (SiC) is a wide-band gap material used in high power and high current electronic applications because of its high thermal conductivity and high breakdown field. Currently SiC is gaining a lot of attention because of the improvements seen in the SiC-MOSFET and SiC applications in the energy industry. It is of great scientific and practical importance to integrate SiC with digital and analog circuits built on Si because it will give more flexibility for device engineers to come up with circuits with low power loss and faster communication between components. One such way of integrating SiC with Si is by transferring thin-films of SiC to Si or other process compatible substrates such as polycrystalline SiC, sapphire and low grade bulk SiC. In this project, hydrogen ion (H+) implantation assisted exfoliation of single crystalline SiC was used transfer 1 to 5 μm thick films to various handle substrates. Optimum conditions for exfoliation and layer transfer were studied extensively. Once the layer transfer was successful surface quality was studied using AFM and chemical etching was used to flatten the post-exfoliation surface. Finally MOS-capacitors and MOSFETs were fabricated on the transferred films and electrical quality of the transferred films was studied.
NotePh.D.
NoteIncludes bibliographical references
Noteby Voshadhi Pansilu Amarasinghe
Genretheses, ETD doctoral
Persistent URLhttps://doi.org/doi:10.7282/T34J0H3D
Languageeng
CollectionGraduate School - New Brunswick Electronic Theses and Dissertations
Organization NameRutgers, The State University of New Jersey
RightsThe author owns the copyright to this work.
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